STPS240H100TV1Y Datasheet Automotive 100 V, 2 x 120 A, power Schottky rectifier A1 K1 Features A2 K2 AEC-Q101 qualified PPAP capable A1 Operating T from -40 C to +175 C j K1 Low thermal resistance Negligible switching losses A2 Low C J0 K2 High forward surge capability ISOTOP Avalanche rated Insulated package ISOTOP: Insulated voltage: 2500 V sine RMS ECOPACK2 compliant component Comply with UL1557 insulation: 2.5 kV Reference file: E81734 Applications DC/DC converter, especially in hybrid or electrical vehicles OBC Secondary rectification Product status link LLC topologies STPS240H100TV1Y Phase shift topologies Product summary Description Symbol Value The STPS240H100TV1Y is an automotive Schottky diode suitable for high frequency I F(AV) 2 x 120 A switch mode power supply. V 100 V RRM Especially suited for DC-DC applications, this isolated ISOTOP Schottky diode will improve the thermal management in harshest environments. Its high forward surge T (max.) 175 C j capability ensures a good robustness during transient phases or in case of short V (typ.) 0.610 V F circuit event. DS13247 - Rev 4 - June 2020 www.st.com For further information contact your local STMicroelectronics sales office.STPS240H100TV1Y Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values, per diode at T = 25 C, unless otherwise specified) amb Symbol Parameter Value Unit V Repetitive peak reverse voltage, T = -40 C to +175 C 100 V RRM j I Forward rms current 225 A F(RMS) T = 140 C, per diode 120 C I Average forward current, = 0.5, square wave A F(AV) T = 140 C, per device 240 C I Surge non repetitive forward current t = 10 ms sinusoidal 1150 A FSM p P t = 10 s, T = 125 C ARM Repetitive peak avalanche power p j 9300 W T Storage temperature range -55 to +175 C stg (1) T Maximum operating junction temperature -40 to +175 C j 1. (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 2. Thermal resistance parameters Symbol Parameter Typ. value Unit Per diode 0.24 R Junction to case C/W th(j-c) Total 0.12 Table 3. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C V = 15 V - 40 j R A (1) T = 25 C I Reverse leakage current - 90 R j V = V R RRM T = 125 C - 26 65 mA j T = 25 C - 0.700 j I = 60 A F T = 150 C - 0.505 0.570 j T = 25 C - 0.750 j (2) V Forward voltage drop I = 80 A V F F T = 150 C - 0.545 0.610 j T = 25 C - 0.825 j I = 120 A F T = 150 C - 0.610 0.680 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the maximum conduction losses, use the following equation: 2 P = 0.46 x I + 0.00183 x I F(AV) F (RMS) For more information, please refer to the following application notes related to the power losses : AN604: Calculation of conduction losses in a power rectifier AN4021: Calculation of reverse losses on a power diode DS13247 - Rev 4 page 2/8