STPS2H100UY STMicroelectronics

STPS2H100-Y Datasheet Automotive 100 V - 2 A power Schottky diode Features AEC-Q101 qualified PPAP capable V guaranteed from -40C to 175C RRM Low leakage current Avalanche capability specified ECOPACK2 compliant Applications DC/DC converter Auxiliary power supply Freewheeling function Reverse battery polarity protection Description This high quality Schottky barrier rectifier device is designed for high frequency miniature switched mode power supplies such as adaptors or on-board DC/DC converters for automotive applications. Packaged in SMB, SMA and SOD128Flat, the STPS2H100-Y provides a high level of performance in compact and flat packages which can withstand high operating junction temperature. Product status link STPS2H100-Y Product summary I 2 A F(AV) V RRM 100 V T (max.) 175 C j V (typ.) 0.60 V F DS6949 - Rev 2 - February 2021 www.st.com For further information contact your local STMicroelectronics sales office.STPS2H100-Y Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage (T = -40C to + 175C) 100 V RRM j T = 135 C SMB L I T = 130 C Average forward current, = 0.5 square wave SMA 2 A F(AV) L T = 150 C SOD128Flat L SMA, SMB 75 I Surge non repetitive forward current t = 10 ms sinusoidal A FSM p SOD128Flat 55 P t = 10 s, Tj = 125C Repetitive peak avalanche power 173 W ARM p T Storage temperature range -65 to +175 C stg (1) T Operating junction temperature range -40 to +175 C j 1. (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 2. Thermal resistance parameter Symbol Parameter Max. value Unit SMA 30 R Junction to lead SMB 25 C/W th(j-l) SOD128Flat 16 For more information, please refer to the following application note: AN5088: Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 1 A j (1) I V = V Reverse leakage current R R RRM T = 125 C - 0.4 1 mA j T = 25 C - 0.79 j I = 2 A F T = 125 C - 0.60 0.65 j (2) V Forward voltage drop V F T = 25 C - 0.88 j I = 4 A F T = 125 C - 0.69 0.74 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 0.56 x I + 0.045 x I F(AV) F (RMS) For more information, please refer to the following application notes related to the power losses : AN604: Calculation of conduction losses in a power rectifier AN4021: Calculation of reverse losses on a power diode DS6949 - Rev 2 page 2/13