STPS30150CFP STMicroelectronics

STPS30150C High voltage power Schottky rectifier Datasheet - production data Features A1 K High junction temperature capability A2 Good trade off between leakage current and forward voltage drop Low leakage current K Avalanche capability specified Insulated package: TO-220FPAB Insulating voltage = 2000 VRMS sine ECOPACK 2 compliant component for A2 DPAK on demand A2 K K A1 A1 Description TO-220AB TO-220FPAB Dual center tap Schottky rectifier designed for high frequency switch mode power supply. Table 1: Device summary Symbol Value IF(AV) 2 x 15 A V 150 V RRM A2 K Tj (max) 175 C TO-247 A1 V (typ) 0.69 V F K K A2 A2 A1 A1 2 D PAK May 2017 DocID7757 Rev 9 1/16 www.st.com This is information on a product in full production. Characteristics STPS30150C 1 Characteristics Table 2: Absolute ratings (limiting values, per diode, at 25 C, unless otherwise specified) Symbo Parameter Value Unit l VRRM Repetitive peak reverse voltage 150 V I Forward rms current 30 A F(RMS) T = 120 C Per diode 15 C TO-220FPAB Average forward T = 90 C Per device 30 C IF(AV) current = 0.5, A TC = 155 C Per diode 15 square wave TO-220AB, 2 D PAK, TO-247 TC = 150 C Per device 30 Surge non I repetitive forward tp = 10 ms sinusoidal 220 A FSM current Repetitive peak P t = 10 s, T = 125 C 750 W ARM p j avalanche power T Storage temperature range -65 to +175 C stg (1) Maximum operating junction temperature Tj +175 C Notes: (1) (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 3: Thermal parameter Symbol Parameter Max. value Unit 2 TO-220AB, D PAK 1.6 TO-220FPAB Per diode 4 TO-247 1.5 R Junction to case C/W th(j-c) 2 TO-220AB, D PAK 0.85 TO-220FPAB Total 3.3 TO-247 0.8 2 TO-220AB, D PAK, TO-247 0.1 Coupling Rth(c) - C/W TO-220FPAB 2.6 When the diodes 1 and 2 are used simultaneously: T = P x R (per diode) + P x R j (diode1) (diode1) th(j-c) (diode2) th(c) 2/16 DocID7757 Rev 9