STTH2R02AY Datasheet Automotive 200 V, 2 A ultrafast diode Features K A AEC-Q101 qualified A Very low conduction losses Negligible switching losses Low forward and reverse recovery times K High junction temperature SMA PPAP capable ECOPACK2 compliant Applications DC/DC converter Reverse polarity protection LED Lighting Injection system Description The STTH2R02AY is based on STs 200 V planar Pt doping technology. This is leading to best in class V /Q performances, especially in high temperature F RR environment. Product status Packaged in SMA package, this device is particularly suitable for high frequency STTH2R02AY operations in automotive applications. Product summary Symbol Value I F(AV) 2 A V 200 V RRM T 175 C j(max.) V 0.71 V F(typ.) t (typ.) 15 ns rr DS13660 - Rev 1 - February 2021 www.st.com For further information contact your local STMicroelectronics sales office.STTH2R02AY Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage (T = -40 C to +175 C) 200 V RRM j I Forward rms current 60 A F(RMS) I T = 119 C Average forward current = 0.5, square wave 2 A F(AV) L I t = 10 ms sinusoidal Surge non repetitive forward current 62 A FSM p T Storage temperature range -65 to +175 C stg T Maximum operating junction temperature +175 C j Table 2. Thermal resistance parameter Symbol Parameter Max. value Unit R Junction to lead 28 C/W th(j-l) For more information, please refer to the following application note : AN5088 : Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 2.5 j I Reverse leakage current V = V A R R RRM T = 125 C - 2.5 25 j T = 25 C I = 2 A - 0.90 1.04 j F V T = 150 C Forward voltage drop - 0.71 0.82 V F j T = 25 C I = 6 A - 1.25 j F 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 0.64 x I + 0.09 x I F(AV) F (RMS) For more information, please refer to the following application notes related to the power losses : AN604: Calculation of conduction losses in a power rectifier AN4021: Calculation of reverse losses on a power diode Table 4. Dynamic characteristics (T = 25 C unless otherwise specified) j Symbol Parameters Test conditions Min. Typ. Max. Unit I = 1 A, dI /dt = -50 A/s, V = 30 V - 23 30 F F R t Reverse recovery time ns rr I = 1 A, dI /dt = -100 A/s, V = 30 V - 15 20 F F R I I = 2 A, dI /dt = -200 A/s, V = 160 V, T = 125 C Reverse recovery current - 3.5 A RM F F R j DS13660 - Rev 1 page 2/9