STTH60RQ06-M2Y Datasheet Automotive 600 V, 60 A ultrafast bridge module Features Operating T from -40 C to +175 C j Ultrafast with soft recovery behaviour PPAP capable SMD with isolated top side cooling Low thermal resistance Backside in insulated ceramic Dice chips on Direct Bond Copper (DBC) substrate ECOPACK2 compliant MSL: Level 3 Insulation voltage (UL 1557): V = 4000 V RMS Applications Output rectification On board charger Charging station Description The ultrafast bridge rectifier is a high-performance device, generally used in a full Product status link wave rectification of an output stage of a DC/DC converter in automotive applications. STTH60RQ06-M2Y Thanks to the high thermal capability of the ACEPACK SMIT package, this integrated module will increase the power density in the application, through very high thermal Device summary (per diode) performances (top side cooling) and insulation done by an embedded ceramic. I 30 A Especially suited for use in Charger applications, either integrated in the vehicle or in F(AV) a charging station, this rectifier will enhance the performance of the targeted V 600 V RRM application. V (typ.) 1.45 V F t (max.) 30 ns rr T -40 C to +175 C j DS13392 - Rev 1 - September 2020 www.st.com For further information contact your local STMicroelectronics sales office.STTH60RQ06-M2Y Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values, at 25 C, unless otherwise specified) Symbol Parameter Value Unit V T = -40 C to +175 C Repetitive peak reverse voltage 600 V RRM j I Forward rms current Per diode 50 A F(RMS) I T = 77 C Average forward current = 0.5, square wave Per diode 30 F(AV) C A I T = 77 C Bridge output current = 0.5, square wave 60 D(AV) C I Surge non repetitive forward current t = 10 ms sinusoidal, T = 25 C 180 A FSM p C T Storage temperature range -65 to +175 C stg T Operating junction temperature range -40 to +175 C j Table 2. Thermal resistance parameters Symbol Parameter Typ. value Max. value Unit R Junction to case per diode 1.03 1.25 C/W th(j-c) For more information, please refer to the following application note related to the thermal management: AN5384: ACEPACK SMIT module package guidelines for mounting and thermal management Table 3. Static electrical characteristics per diode Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 40 j (1) V = V I Reverse leakage current A R R RRM T = 150 C - 80 800 j T = 25 C - 2.45 j I = 15 A F T = 150 C - 1.15 1.45 j (2) V Forward voltage drop V F T = 25 C - 2.95 j I = 30 A F T = 150 C - 1.45 1.85 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 1.05 x I + 0.026 x I F(AV) F (RMS) DS13392 - Rev 1 page 2/12