STTH6110TV Ultrafast recovery - high voltage diode Main product characteristics A1 K1 A1 K2 I 2 x 30 A F(AV) V 1000 V RRM T 150 C j A2 K2 K1 A2 V (typ) 1.3 V F t (typ) 42 ns rr A1 A1 Features and benefits K2 K1 Ultrafast, soft recovery A2 K1 Very low conduction and switching losses K2 High frequency and/or high pulsed current A2 operation ISOTOP ISOTOP High reverse voltage capability STTH6110TV1 STTH6110TV2 High junction temperature Insulated package Order codes Electrical insulation = 2500 V RMS Capacitance = 45 pF Part Number Marking Description STTH6110TV1 STTH6110TV1 STTH6110TV2 STTH6110TV2 The compromise-free, high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. These demanding applications include industrial power supplies, motor control, and similar industrial systems that require rectification and freewheeling. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications. The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate advantage for reducing maintenance of the equipment March 2006 Rev 1 1/8 www.st.com 8Characteristics STTH6110TV 1 Characteristics Table 1. Absolute ratings (limiting values per diode at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 1000 V RRM I RMS forward current 60 A F(RMS) I Average forward current, = 0.5 Per diode T = 60 C 30 A F(AV) c I Repetitive peak forward current t = 5 s, F = 5 kHz square 350 A FRM p I Surge non repetitive forward current t = 10 ms Sinusoidal 240 A FSM p T Storage temperature range -65 to + 150 C stg T Maximum operating junction temperature 150 C j Table 2. Thermal parameters Symbol Parameter Value Unit Per diode 1.4 R Junction to case th(j-c) Total 0.75 C/W R Coupling thermal resistance 0.1 th(c) When the diodes are used simultaneously: T = P x R (per diode) + P x R j(diode1) (diode1) th(j-c) (diode2) th(c) Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit T = 25 C 15 j (1) I Reverse leakage current V = V A R R RRM T = 125 C 10 100 j T = 25 C 2.0 j (2) V Forward voltage drop T = 100 C I = 30 A 1.4 1.8 V F j F T = 150 C 1.3 1.7 j 1. Pulse test: t = 5 ms, < 2 % p 2. Pulse test: t = 380 s, < 2 % p To evaluate the conduction losses use the following equation: 2 P = 1.3 x I + 0.013 I F(AV) F (RMS) 2/8