STTH8ST06DI STMicroelectronics

STTH8ST06 600 V tandem extra fast diode Datasheet production data Description . This device is part of ST s second generation of 600 V tandem diodes. It has ultralow switching- losses with a minimized Q that makes it perfect RR for use in circuits working in hard-switching mode. In particular the V /Q trade-off positions this F RR device between standard ultrafast diodes and silicon-carbide Schottky rectifiers in terms of . price/performance ratio. & LQV 2 7 The device offers a new positioning giving more flexibility to power-circuit designers looking for good performance while still respecting cost Features constraints. Featuring ST s Turbo 2 600 V technology, the High voltage rectifier device is particularly suited as a boost diode in Tandem diodes in series continuous conduction mode power factor Very low switching losses correction circuits. Insulated device with internal ceramic Table 1. Device summary Equal thermal conditions for both 300 V diodes Symbol Value Static and dynamic equilibrium of internal diodes are warranted by design I 8 A F(AV) Insulated package: V 600 V RRM Insulated voltage: 2500 V sine RMS t (typ) 13 ns rr I (typ) 2 A RM V (typ) 2.5 V F I 40 A FRM T (max) 175 C j July 2015 DocID024150 Rev 2 1/9 This is information on a product in full production. www.st.com 9Characteristics STTH8ST06 1 Characteristics Table 2. Absolute ratings (limiting values at T = 25 C, unless otherwise specified) j Symbol Parameter Value Unit T from 25 to 150 C 600 j V Repetitive peak reverse voltage V RRM T = -40 C 550 j I Forward rms current 14 A F(RMS) I Average forward current, = 0.5, square wave T = 80 C 8 A F(AV) c I Surge non repetitive forward current t = 10 ms sinusoidal 55 A FSM p I Repetitive peak forward current T = 80 C, = 0.1 40 A FRM c T Storage temperature range -65 to +175 C stg T Operating junction temperature range -40 to +175 C j Table 3. Thermal parameters Symbol Parameter Value Unit R Junction to case 2.9 C/W th(j-c) Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C -6 j (1) I Reverse leakage current V = V A R R RRM T = 125 C - 20 200 j T = 25 C -3.4 j (2) V Forward voltage drop I = 8 A V F F T = 150 C - 2.5 3.1 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 2.2 x I + 0.113 I F(AV) F (RMS) 2/9 DocID024150 Rev 2