BTA10, BTB10 T1035, T1050 Datasheet 10 A Snubberless, logic level and standard Triacs A2 Features Medium current Triac Low thermal resistance with clip bonding G Low thermal resistance insulation ceramic for insulated BTA A1 High commutation (4Q) or very high commutation (3Q, Snubberless) A2 capability BTA series UL1557 certified (file ref: 81734) Packages are RoHS (2002/95/EC) compliant G G A2 A2 A1 A1 TO-220AB TO-220AB Ins. Description A2 Available either in through-hole or surface mount packages, the BTA10, BTB10 and T10xx Triac series are suitable for general purpose mains power AC switching. They G can be used as ON/OFF function in applications such as static relays, heating A2 A1 regulation or induction motor starting circuit. They are also recommended for phase DPAK control operations in light dimmers and appliance motors speed controllers. The Snubberless versions (W suffix and T10xx) are especially recommended for use on inductive loads, because of their high commutation performance. By using an internal ceramic pad, the Snubberless series provide an insulated tab (rated at 2500 V ) complying with UL standards (file reference: E81734). RMS Product status link BTA10, BTB10, T1035, T1050 Product summary I 10 A T(RMS) V /V 600 and 800 V DRM RRM I 25 to 50 mA GT DS3165 - Rev 9 - March 2019 www.st.com For further information contact your local STMicroelectronics sales office.BTA10, BTB10, T1035, T1050 Characteristics 1 Characteristics Table 1. Absolute maximum ratings Symbol Parameters Value Unit T = 105 C TO-220AB c I RMS on-state current (full sine wave) 10 A T(RMS) T = 95 C TO-220AB Ins. c F = 50 Hz t = 20 ms 100 p Non repetitive surge peak on-state current (full cycle, T j I A TSM initial = 25 C) F = 60 Hz t = 16.7 ms 105 p 2 2 2 t = 10 ms 55 I t I t value for fusing A s p Critical rate of rise of on-state current T = 125 C dl/dt F = 120 Hz 50 A/s j I = 2 x I , t 100 ns G GT r V /V + DRM RRM V /V t = 10 ms T = 25 C Non repetitive surge peak off-state voltage V DSM RSM p j 100 I t = 20 s T = 125 C Peak gate current 4 A GM p j P T = 125 C Average gate power dissipation 1 W G(AV) j T Storage junction temperature range -40 to +150 C stg T Operating junction temperature range -40 to +125 C j Table 2. Static electrical characteristics Symbol Test conditions T Value Unit j (1) I = 14 A, t = 380 s V 25 C Max. 1.55 V T TM p V threshold on-state voltage 125 C Max. 0.85 V TO R Dynamic resistance 125 C Max. 40 m D 25 C 5 A I /I V = V Max. DRM RRM DRM RRM 125 C 1 mA 1. For both polarities of A2 referenced to A1 Table 3. Electrical characteristics (T = 25 C, unless otherwise specified) - Snubberless (3 quadrants) j T1050 BTA10-xCW Symbol Parameters Quadrant T1035 BTA10-xBW Unit BTB10-xCW BTB10-xBW I I - II - III Max. 35 50 mA GT V = 12 V, R = 33 D L V I - II - III Max. 1.3 V GT V V = V , R = 3,3 k, T = 125 C I - II - III Min. 0.2 V GD D DRM L j I I = 500 mA I - II - III Max. 35 50 mA H T I - III Max. 50 70 I I = 1.2 I mA L G GT II Max. 80 60 80 (2) dV/dt V = 67 % V gate open, T = 125 C Min. 500 1000 V/s D DRM j DS3165 - Rev 9 page 2/12