T1210T-8G-TR STMicroelectronics

T1210T-8G Datasheet 2 12 A - 800 V logic level T-series Triac in D PAK Features A2 150 C maximum junction temperature Three quadrants High commutation on resistive loads Surge capability V , V = 900 V DSM RSM A2 A1 Benefits: G Easy direct control by MCU thanks to low 10 mA I GT DPAK Increase of thermal margin due to extended working T up to 150 C j Ability to turn off resistive surges of 28 A A2 A2: Anode2 Applications A1: Anode1 General purpose AC line load switching G: Gate G Small home appliances with resistive loads A1 Hybrid relays Inrush current limiting circuits Overvoltage crowbar protection Description The SMD T1210T-8G Triac can be used for the on/off or phase angle control function in general purpose AC switching with resistive loads. A Logic level T-series Triac, the T1210T-8G can be controlled directly from an MCU with a simplified circuit. Product status link 2 T-series triacs are optimized for high EMI constraints. The surface mount D PAK T1210T-8G package enables compact SMT designs for automated manufacturing. 2 Product summary D PAK package s molding compound resin is halogen-free and meets UL94 flammability standard level V0. I 12 A T(RMS) Package environmentally friendly Ecopack2 graded (RoHS and Halogen Free V /V 800 V DRM RRM compliance). V /V 900 V DSM RSM I 10 mA GT DS13088 - Rev 3 - October 2020 www.st.com For further information contact your local STMicroelectronics sales office.T1210T-8G Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values), T = 25 C unless otherwise specified j Symbol Parameter Value Unit T = 125 C 800 V j V /V Repetitive peak off-state voltage (50-60 Hz) DRM RRM T = 150 C 600 V j t = 10 ms, p V /V Non Repetitive peak off-state voltage 900 V DSM RSM T = 25 C j I T = 131 C RMS on-state current (full sine wave) 12 A T(RMS) c Non repetitive surge peak on-state current t = 16.7 ms 105 I A TSM (full cycle, T initial = 25 C) t = 20 ms 100 j 2 2 2 t = 10 ms 66 I t I t value for fusing p A s dl/dt Critical rate of rise of on-state current, I = 2 x I , tr 100 ns f = 100 Hz 100 A/s G GT I Peak gate current t = 20 s, 4 A GM p T = 150 C V GM Peak Gate Voltage j 5 V P T = 150 C Average gate power dissipation 1 W G(AV) j T Storage junction temperature range -40 to +150 C stg T Operating junction temperature range -40 to +150 C j Table 2. Electrical characteristics (T = 25 C, unless otherwise specified) j Quadrants Symbol Test conditions Value Unit T j (1) I V = 12 V, R = 30 I - II - III Max. 10 mA D L GT V V = 12 V, R = 30 I - II - III Max. 1 V GT D L V V = 800 V, R = 3.3 k T = 125 C I - II - III Min. 0.15 V GD D L j I = 1.2 x I I - III Max. 30 mA G GT I L I = 1.2 x I II Max. 35 mA G GT (2) I = 500 mA, gate open I Max. 25 mA H T V = 536 V, gate open T = 125 C Min. 200 V/s D j (2) dV/dt V = 402 V, gate open T = 150 C D j Min. 150 V/s T = 125 C 20 j (dV/dt)c = 0.1 V/s Min. A/ms T = 150 C 14.4 j (2) (dl/dt)c T = 125 C 6 j (dV/dt)c = 10 V/s Min. A/ms T = 150 C 3.8 j 1. Minimum I is guaranteed at 5% of I max GT GT 2. For both polarities of A2 referenced to A1. DS13088 - Rev 3 page 2/12