X-On Electronics has gained recognition as a prominent supplier of T1235T-8R Triacs across the USA, India, Europe, Australia, and various other global locations. T1235T-8R Triacs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Triacs, ensuring timely deliveries around the world.

T1235T-8R STMicroelectronics

T1235T-8R electronic component of STMicroelectronics
T1235T-8R STMicroelectronics
T1235T-8R Triacs
T1235T-8R  Semiconductors

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See Product Specifications
Part No. T1235T-8R
Manufacturer: STMicroelectronics
Category: Triacs
Description: Triacs 12 A Snuberless Triac
Datasheet: T1235T-8R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
14: USD 0.4559 ea
Line Total: USD 6.38 
Availability - 0
MOQ: 14  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 18 Apr to Thu. 24 Apr
MOQ : 2000
Multiples : 1000
2000 : USD 0.4505
3000 : USD 0.4405
4000 : USD 0.4364
5000 : USD 0.4363

0
Ship by Fri. 18 Apr to Thu. 24 Apr
MOQ : 2000
Multiples : 2000
2000 : USD 0.4667

0
Ship by Wed. 16 Apr to Fri. 18 Apr
MOQ : 1
Multiples : 1
1 : USD 3.2088
10 : USD 1.2116
25 : USD 1.103

0
Ship by Fri. 18 Apr to Thu. 24 Apr
MOQ : 14
Multiples : 1
14 : USD 0.4559

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
On-State RMS Current - It RMS
Rated Repetitive Off-State Voltage VDRM
Off-State Leakage Current @ VDRM IDRM
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Minimum Operating Temperature
Series
Brand
Product Type
Factory Pack Quantity :
Subcategory
Tradename
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the T1235T-8R from our Triacs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the T1235T-8R and other electronic components in the Triacs category and beyond.

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T1235T-8R 12 A Snubberless Triac Datasheet - production data A2 Description Housed in an IPAK package this device is dedicated to low profile compact applications. G Its fully rated 150 C junction temperature allows A1 high AC commutation capability for on/off or A2 phase control applications without snubber aid circuit. Table 1: Device summary Symbol Value Unit G A2 VDRM/VRRM 800 V A1 IPAK I 35 mA GT Tj 150 C Features 12 A medium current Triac Three triggering quadrants device Very high noise immunity and dynamic commutation ECOPACK 2 compliant component Applications General purpose AC line load control Motor control circuits Home, kitchen and tools appliances Lighting Inrush current limiting circuits November 2017 DocID031120 Rev 1 1/9 www.st.com This is information on a product in full production. Characteristics T1235T-8R 1 Characteristics Table 2: Absolute ratings (limiting values), Tj = 25 C, unless otherwise specified Symbol Parameter Value Unit IT(RMS) RMS on-state current (full sine wave) TC = 128 C 12 A t = 20 ms 90 p Non repetitive surge peak on-state current ITSM A (full cycle, T initial = 25 C) j tp = 16.7 ms 95 It It value for fusing t = 10 ms 66 As p Critical rate of rise of on-state current dl/dt f = 100 Hz 100 A/s IG = 2 x IGT , tr 100 ns T = 125 C 800 j VDRM / VRRM Repetitive peak off-state voltage Tj = 150 C 600 V V / V Non repetitive surge peak off-state voltage t = 10 ms 900 DSM RSM p I Peak forward gate current tp = 20 s T = 150 C 4 A GM j PG(AV) Average gate power dissipation Tj = 150 C 1 W T Storage junction temperature range -40 to +150 C stg Tj Operating junction temperature range -40 to +150 C Table 3: Electrical characteristics (Tj = 25 C unless otherwise specified) Symbol Test conditions Quadrant Value Unit (1) IGT Max. 35 mA V = 12 V, R = 33 I - II - III D L V Max. 1 V GT VGD VD = VDRM, RL = 3.3 k, Tj = 150 C I - II - III Min. 0.15 V (1) IH I = 500 mA, gate open Max. 35 mA T I - III 50 I I = 1.2 x I Max. mA L G GT II 80 VD = 536 V, gate open Tj = 125 C 2000 (2) dV/dt Min. V/s V = 402 V, gate open T = 150 C 1000 D j Tj = 125 C 19.5 (2) (dI/dt)c Without snubber Min. A/ms T = 150 C 13 j Notes: (1) minimum I is guaranted at 5% of I max. GT GT (2) for both polarities of A2 referenced to A1. 2/9 DocID031120 Rev 1

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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