T1610, T1635, T1650 BTA16, BTB16 Datasheet Snubberless, logic level and standard 16 A Triacs A2 Features Medium current Triac Low thermal resistance with clip bonding G Low thermal resistance insulation ceramic for insulated BTA A1 High commutation (4Q) or very high commutation (3Q, Snubberless) A2 capability BTA series UL1557 certified (file ref: 81734) Packages are RoHS (2002/95/EC) compliant G G A2 A2 A1 A1 Insulated tab (BTA series, rated at 2500 V ) RMS TO-220AB TO-220AB Ins. A2 Applications Snubberless versions (BTA/BTB...W and T1635) especially recommended for G A2 use on inductive loads, because of their high commutation performances A1 DPAK On/off or phase angle function in applications such as static relays, light dimmers and appliance motor speed controllers Description Available either in through-hole or surface mount packages, the BTA16, BTB16 and T1610, T1635 and T1650 Triac series are suitable for general purpose mains power AC switching. They can be used as ON/OFF function in applications such as static relays, heating regulation or induction motor starting circuit. They are also recommended for phase control operations in light dimmers and appliance motors Product status link speed controllers. BTA16 The Snubberless versions (W suffix and T1610, T1635, T1650) are especially BTB16 recommended for use on inductive loads, because of their high commutation performance. T1610 By using an internal ceramic pad, the Snubberless series provide an insulated tab T1635 (rated at 2500 V ) complying with UL standards (file reference: E81734). RMS T1650 Product summary I 16 A T(RMS) V /V 600, 800 V DRM RRM I Snubberless 10, 35, 50 mA GT I standard 25, 50 mA GT DS2114 - Rev 11 - May 2018 www.st.com For further information contact your local STMicroelectronics sales office.T1610, T1635, T1650, BTA16, BTB16 Characteristics 1 Characteristics Table 1. Absolute maximum ratings Symbol Parameters Value Unit 2 T = 100 C TO-220AB, D PAK c I RMS on-state current (full sine wave) 16 A T(RMS) T = 86 C TO-220AB Ins. c t = 20 ms F = 50 Hz 160 p Non repetitive surge peak on-state current (full cycle, I A TSM T initial = 25 C) j t = 16.7 ms F = 60 Hz 168 p 2 2 2 t = 10 ms I t I t value for fusing 144 A s p Critical rate of rise of on-state current T = 125 C dl/dt F = 120 Hz 50 A/s j I = 2 x I , t 100 ns G GT r V /V + DRM RRM V /V Non repetitive surge peak off-state voltage t = 10 ms T = 25 C V DSM RSM p j 100 I t = 20 s T = 125 C Peak gate current 4 A GM p j P T = 125 C Average gate power dissipation 1 W G(AV) j T Storage junction temperature range -40 to +150 C stg T Operating junction temperature range -40 to +125 C j Table 2. Static electrical characteristics T Symbol Test conditions Value Unit j (1) V I = 22.5 A, t = 380 s 25 C Max. 1.55 V T TM p (1) V threshold on-state voltage 125 C Max. 0.85 V TO (1) R Dynamic resistance 125 C Max. 25 m D 25 C 5 A I /I V = V Max. DRM RRM DRM RRM 125 C 2 mA 1. For both polarities of A2 referenced to A1 Table 3. Electrical characteristics (T = 25 C, unless otherwise specified) - standard (4 quadrants) j BTA16 BTB16 Symbol Parameters Quadrant Unit C B I - II - III 25 50 (1) I Max. mA GT IV 50 100 V = 12 V, R = 33 D L V All Max. 1.3 V GT V V = V , R = 3.3 k, T = 125 C All Min. 0.2 V GD D DRM L j (2) I = 500 mA I Max. 25 50 mA H T I - III - IV Max. 40 60 I I = 1.2 I mA L G GT II Max. 80 120 DS2114 - Rev 11 page 2/18