T1610T-8G Datasheet 16 A logic level (sensitive) Triac Features A2 High static dV/dt High dynamic turn-off commutation (dl/dt)c 150 C maximum junction temperature A2 Three quadrants A1 Surge capability V , V = 900 V G DSM RSM Benefits: DPAK High immunity to false turn-on thanks to high static dV/dt Better turn-off in high temperature environments thanks to (dI/dt)c A2 Increase of thermal margin due to extended working T up to 150 C j A2: Anode2 Good thermal resistance due to non-insulated tab. A1: Anode1 G: Gate G Applications A1 General purpose AC line load switching Motor control circuits Home appliances Heating Lighting Inrush current limiting circuits Overvoltage crowbar protection Product status link Description T1610T-8G Product summary Available in SMD, the T1610T-8G Triac can be used for the on/off or phase angle control function in general purpose AC switching where high commutation capability I 16 A T(RMS) is required. This device can be used without a snubber RC circuit when the limits V /V defined are respected. 800 V DRM RRM 2 V /V D PAK Package is UL-94,V0 flammability resin compliance. 900 V DSM RSM I Package environmentally friendly Ecopack 2 graded (RoHS and Halogen Free 10 mA GT compliance). Snubberless is a trademark of STMicroelectronics. DS12532 - Rev 2 - July 2018 www.st.com For further information contact your local STMicroelectronics sales office.T1610T-8G Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values), T = 25 C unless otherwise specified j Symbol Parameter Value Unit T = 125 C 800 V j V /V Repetitive peak off-state voltage (50-60 Hz) DRM RRM T = 150 C 600 V j V /V t = 10 ms, T = 25 C Non Repetitive peak off-state voltage 900 V DSM RSM p j I T = 126 C RMS on-state current (full sine wave) 16 A T(RMS) c t = 16.7 ms 126 Non repetitive surge peak on-state current (full cycle, T initial = 25 j I A TSM C t = 20 ms 120 2 2 2 t = 10 ms 95 I t I t value for fusing A s p Critical rate of rise of on-state current, I = 2 x I , tr 100 ns dl/dt f = 100 Hz 100 A/s G GT I Peak gate current 4 A GM t = 20 s, T = 150 C p j V Peak Gate Voltage 5 V GM P Average gate power dissipation T = 150 C 1 W G(AV) j T Storage junction temperature range -40 to +150 C stg T Operating junction temperature range -40 to +150 C j Table 2. Electrical characteristics (T = 25 C, unless otherwise specified) j Symbol Test conditions Quadrants T Value Unit j (1) V = 12 V, R = 30 I I - II - III Max. 10 mA GT D L V V = 12 V, R = 30 I - II - III Max. 1.3 V GT D L V V = 800 V, R = 3.3 k T = 125 C I - II - III Min. 0.2 V GD D L j I = 1.2 x I I - III Max. 20 mA G GT I L I = 1.2 x I II Max. 30 mA G GT (2) I I = 500 mA, gate open Max. 25 mA T H V = 536 V, gate open T = 125 C Min. 100 V/s D j (2) dV/dt V = 402 V, gate open T = 150 C Min. 50 V/s D j T = 125 C 9 j (dV/dt)c = 0.1 V/s Min. A/ms T = 150 C 5.4 j (2) (dl/dt)c T = 125 C 3 j (dV/dt)c = 10 V/s Min. A/ms T = 150 C 1.8 j 1. Minimum I is guaranteed at 5% of I max GT GT 2. For both polarities of A2 referenced to A1. DS12532 - Rev 2 page 2/11