T1610H 16 A Triac, high temperature and logic level Datasheet production data A2 Applications Electric heater G Water heater, room heater A1 Coffee machine A2 Hand dryer Thermostat A1 A2 Description G This clip technology Triac has very high thermal TO-220AB cycling performance, and the design structure (T1610H-6T) presents a higher I . The 150 C maximum TSM junction temperature of this device offers easier thermal management. Its 10 mA gate current offers direct drive from a microcontroller, mainly Features for resistive load control. Junction temperature up to 150 C max. Table 1. Device summary Logic level gate current: 10 mA V , DRM Order code Package I I Repetitive peak off-state voltage: 600 V GT T(RMS) V RRM High I TSM T1610H-6T TO-220AB 600 V 10 mA 16 A High thermal cycling performance May 2013 DocID024630 Rev 1 1/9 This is information on a product in full production. www.st.com 9Characteristics T1610H 1 Characteristics Table 2. Absolute maximum rating (T = 25 C, unless otherwise specified) j Symbol Parameter Value Unit I On-state rms current (180 conduction angle) T = 133 C 16 A T(RMS) c t = 16.7 ms 168 p I Non repetitive surge peak on-state current, T initial = 25 C A TSM j t = 20ms 160 p ItI t Value for fusing t = 10 ms 169 A s p dI/dt Critical rate of rise of on-state current, I = 2 x I , tr 100 ns F = 60 Hz 100 A/s G GT V , DRM Repetitive peak off-state voltage T = 150 C 600 V j V RRM V , DSM Non repetitive peak off-state voltage t = 10 ms 700 V p V RSM I Peak gate current t = 20 s 4 A GM p P Peak gate power dissipation t = 20 s 10 W GM p P Average gate power dissipation 1 W G(AV) T Storage junction temperature range stg -40 to +150 C T Operating junction temperature range j T Lead temperature for soldering during 10 s 260 C L Table 3. Electrical characteristics (T = 25 C, unless otherwise specified) j Symbol Test conditions Quadrant Value Unit MIN. 0.5 mA I V = 12 V, R = 33 I - II - III GT D L MAX. 10 mA V V = 12 V, RL = 33 I - II - III MAX. 1.3 V GT D V V = V , R = 3.3 k T = 150 C I - II - III MIN. 0.2 V GD D DRM L j I I = 500 mA, gate open MAX. 15 mA H T I I = 1.2 I I - II - III MAX. 30 mA L G GT dV/dt V = 67% x V , V , gate open T = 150 C MIN. 100 V/s D DRM RRM j (dV/dt)c = 0.1 V/s 8.5 (dl/dt)c T = 150 C MIN. A/ms j (dV/dt)c = 10 V/s 3 I = 13 A, V = 400 V, I = 100 mA, TM D G t TYP. 2 s gt dI /dt = 100 mA/s, R = 30 G L 2/9 DocID024630 Rev 1