T1605G-6I STMicroelectronics

T1605G-6I Datasheet 16 A Triac for LED light dimmer Features A2 Three quadrants with logic level gate Benefits: Super low holding current I = 5 mA H Optimized thermal performance with low power dissipation G A1 Optimized turn-off commutation for lighting loads Application G Lighting: A2 A1 Universal light dimmers TO-220AB Ins. LED light dimmers Heating Overvoltage crowbar protection Description The T1605G-6I Triac in TO-220AB insulated can be used for the on/off or phase angle control function in general purpose AC switching where high commutation capability is required. Its super low holding current I enables deep dimming for LED light dimmers without H flickering nor jittering. Product status link Package environmentally friendly ECOPACK2, RoHS (2011/65/EU) and halogen free compliant. T1605G-6I TO-220AB insulated package is UL-94, V0 flammability resin compliance. Product summary This component is recognized by UL. Representative samples of this component have been evaluated by UL and meet applicable UL requirements for UL 1557 Order code T1605G-6I standard (File Ref. 81734). Package TO-220AB Ins. V /V 600 V DRM RRM I 5 mA GT I 5 mA H DS13499 - Rev 3 - September 2021 www.st.com For further information contact your local STMicroelectronics sales office.T1605G-6I Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values) Symbol Parameters Value Unit I T = 85 C RMS on-state current (full sine wave) 16 A T(RMS) c t = 16.7 ms T = 25 C Non repetitive surge peak on-state current, 140 p j I A TSM (full cycle, T initial = 25 C) j t = 20 ms T = 25 C 132 p j 2 2 2 t = 10 ms T = 25 C 116 I t I t value for fusing p j A s Critical rate of rise of on-state current dl/dt f = 50 Hz T = 25 C 50 A/s j I = 2 x I , t 100 ns G GT r V /V T = 125 C Repetitive peak off-state voltage 600 V DRM RRM j V /V t = 20 ms T = 25 C Non repetitive surge peak off-state voltage 700 V DSM RSM p j I Peak gate current t = 20 s T = 125 C 4 A GM p j P Average gate power dissipation T = 125 C 1 W G(AV) j T Storage junction temperature range -40 to +150 C stg T Operating junction temperature range -40 to +125 C j Table 2. Electrical characteristics (T = 25 C, unless otherwise specified) j Symbol Parameters Quadrant Value Unit Min. 0.25 I mA GT V = 12 V, R = 33 Max. 5 I - II - III D L V Max. 1.3 V GT V V = V , R = 3.3 k, T = 125 C I - II - III Min. 0.2 V GD D DRM L j (1) I I = 500 mA, gate open Max. 5 mA T H I - III 10 I I = 1.2 I Max. mA L G GT II 15 (1) V = 67% V , gate open T = 125 C dV/dt Min. 10 V/s D DRM j (1) T = 125 C (dl/dt)c (dV/dt)c = 0.1 V/s Min. 2.5 A/ms j 1. For both polarities of A2 referenced to A1 Table 3. Static electrical characteristics T Symbol Test conditions Value Unit j (1) V I = 22.5 A, t = 380 s 25 C Max. 1.55 V TM p TM (1) V threshold on-state voltage 125 C Max. 0.83 V TO (1) R Dynamic resistance 125 C Max. 28 m D 25 C 5 A I /I V = V = 600 V Max. DRM RRM DRM RRM 125 C 1 mA 1. For both polarities of A2 referenced to A1 DS13499 - Rev 3 page 2/10