T2650-6PF Datasheet 26 A 600 V Snubberless Triac in TO-3PF A2 Features High current Triac G Max. blocking voltage = V , V = 600 V DRM RRM A1 Max. surge voltage = V , V = 700 V DSM RSM Snubberless high static and dynamic commutation: (dI/dt)c = 22 A/ms dV/dt = 1000 V/s G UL recognized component at 2.5 kV for UL-1557 (File Ref. 81734) A2 A1 ECOPACK2 compliant (RoHS and HF compliance) TO-3PF UL-94, V0 flammability package resin compliance Applications On/off function in static relays, heating regulation, induction motor starting circuit Phase control operations in light dimmers, motor speed controller and SMPS inrush current limiter Description Available in power package TO-3PF, the T2650-6PF Snubberless Triac is suitable for general purpose AC switching. When used with the properly dimensioned heatsink, the T2650-6PF can enable AC switching systems up to 3 kW for 120 V AC mains. Refer to ST Application Note AN533 for thermal management of Triacs. A Snubberless Triac, the T2650-6PF is recommended for industrial applications where high immunity and high surge current are required. The T2650-6PF provides an insulated tab (rated at 2500 V rms). Recognized by UL, representative samples of this component have been evaluated by UL and meet applicable UL requirements for UL-1557 standard (File Ref. 81734). Product status link T2650-6PF Product summary I 26 A T(RMS) I TSM 260 A V , V 600 V DRM RRM V , V 700 V DSM RSM I 50 mA GT DS13555 - Rev 1 - December 2020 www.st.com For further information contact your local STMicroelectronics sales office.T2650-6PF Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values) Symbol Parameter Value Unit I T = 78 C RMS on-state current (full sine wave) 26 A T(RMS) c Non repetitive surge peak on-state current t = 16.7 ms 270 I T = 25 C A TSM j (full cycle,T initial = 25 C) j t = 20 ms 260 2 2 2 t = 10 ms T = 25 C 447 I t I t value for fusing p j A s Critical rate of rise of on-state current, T = 25 C dl/dt F = 50 Hz 50 A/s j I = 2 x I , tr 100 ns G GT V /V Repetitive peak off-state voltage T = 125 C 600 V DRM RRM j V /V t = 10 ms T = 25 C Non repetitive peak off-state voltage 700 V DSM RSM p j I Peak gate current 4 A GM t = 20 s T = 125 C p j V Peak gate voltage 8 V GM P T = 125 C Average gate power dissipation 1 W G(AV) j T Storage temperature range -40 to +150 C stg T Operating junction temperature range -40 to +125 C j Table 2. Electrical characteristics (T = 25 C, unless otherwise specified) j Symbol Test conditions Quadrants T Value Unit j (1) I Max. 50 mA GT V = 12 V, R = 33 I - II - III D L V Max. 1.3 V GT V V = V , R = 3.3 k, T = 125 C I - II - III Min. 0.2 V GD D DRM L j I - III Max. 80 mA I I = 1.2 x I L G GT II Max. 100 mA (2) I = 500 mA, gate open I Max. 75 mA H T (2) V = 67% V , gate open T = 125 C Min. 1000 V/s dV/dt D DRM j (2) T = 125 C (dl/dt)c Without snubber. (dV/dt)c > 20 V/s Min. 22 A/ms j 1. Minimum I is guaranteed at 5% of I max GT GT 2. For both polarities of A2 referenced to A1. Table 3. Static electrical characteristics T Symbol Test conditions Value Unit j (1) I = 36.8 A, t = 380 s V 25 C Max. 1.55 V TM TM p (1) V Threshold voltage 125 C Max. 0.85 V TO (1) R Dynamic resistance 125 C Max. 14 m D 25 C 5 A I , I V = V , V = V Max. DRM RRM D DRM R RRM 125C 4 mA 1. For both polarities of A2 referenced to A1. DS13555 - Rev 1 page 2/10