X-On Electronics has gained recognition as a prominent supplier of TIP102 Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. TIP102 Darlington Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

TIP102 STMicroelectronics

TIP102 electronic component of STMicroelectronics
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See Product Specifications
Part No.TIP102
Manufacturer: STMicroelectronics
Category: Darlington Transistors
Description: Transistors Darlington NPN Power Darlington
Datasheet: TIP102 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.2704 ea
Line Total: USD 1.27

Availability - 231
Ship by Tue. 06 Aug to Fri. 09 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
183
Ship by Tue. 06 Aug to Fri. 09 Aug
MOQ : 1
Multiples : 1
1 : USD 1.2704
10 : USD 1.0098
30 : USD 0.898
100 : USD 0.8049
500 : USD 0.7429
1000 : USD 0.7056

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector- Base Voltage VCBO
Maximum DC Collector Current
Maximum Collector Cut-off Current
Mounting Style
Package / Case
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Category
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TIP102 from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TIP102 and other electronic components in the Darlington Transistors category and beyond.

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Image Part-Description
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TIP102 TIP107 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 3 2 AUDIO POWER AMPLIFIER 1 GENERAL POWER SWITCHING DC-AC CONVERTER TO-220 EASY DRIVER FOR LOW VOLTAGE DC MOTOR DESCRIPTION The TIP102 is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in TO-220 plastic INTERNAL SCHEMATIC DIAGRAM package. It is intented for use in power linear and switching applications. The complementary PNP type is TIP107. R Typ. = 5 K R Typ. = 150 1 2 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN TIP102 PNP TIP107 VCBO Collector-Base Voltage (IE = 0) 100 V V Collector-Emitter Voltage (I = 0) 100 V CEO B V Emitter-Base Voltage (I = 0) 5 V EBO C I Collector Current 8 A C I Collector Peak Current 15 A CM I Base Current 1 A B o Ptot Total Dissipation at T 25 C 80 W case o 2 W T 25 C amb o T Storage Temperature -65 to 150 C stg o T Max. Operating Junction Temperature 150 C j * For PNP types voltage and current values are negative. 1/4 April 2003 TIP102 / TIP107 THERMAL DATA o R Thermal Resistance Junction-case Max 1.56 C/W thj-case o R Thermal Resistance Junction-ambient Max 62.5 C/W thj-amb o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off V = 50 V 50 A CEO CE Current (I = 0) B I Collector Cut-off V = 100 V 50 A CBO CB Current (I = 0) E I Emitter Cut-off Current V = 5 V 8 mA EBO EB (I = 0) C V * Collector-Emitter I = 30 mA 100 V CEO(sus) C Sustaining Voltage (I = 0) B V * Collector-Emitter I = 3 A I = 6 mA 2 V CE(sat) C B Saturation Voltage IC = 8 A IB = 80 mA 2.5 V V * Base-Emitter Voltage I = 8 A V = 4 V 2.8 V BE C CE h * DC Current Gain I = 3 A V = 4 V 1000 20000 FE C CE I = 8 A V = 4 V 200 C CE V * Forward Voltage of I = - I = 10 A 2.8 V F F C Commutation Diode (IB = 0) * Pulsed: Pulse duration = 300 s, duty cycle 1.5 % For PNP types voltage and current values are negative. Safe Operating Area 2/4

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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