TN2015H-6I Datasheet 20 A 600 V high temperature SCR thyristors in insulated TO-220 Features A High junction temperature: T max. = 150 C j High static immunity dV/dt = 750 V/s up to 150 C G Peak off-state voltage V /V = 600 V DRM RRM K High turn-on current rise dI/dt = 100 A/s Insulated package TO-220AB: Insulated voltage: 2500 V RMS Complies with UL 1557 (File ref : E81734) K ECOPACK2 compliant A G Halogen-free molding, lead-free plating TO-220AB insulated Applications General purpose AC line load switching Motor control circuits and starters Inrush current limiting circuits Heating resistor control, solid state relays Description Thanks to its operating junction temperature up to 150C, the TN2015H-6I offers high thermal performance operation up to 20 A rms. Product status Its trade-off noise immunity (dV/dt = 750 V/s) versus its gate triggering current TN2015H-6I (I = 15 mA) and its turn-on current rise (dI/dt = 100 A/s) allows to design robust GT and compact control circuit for voltage regulator in motorbikes and industrial drives, Product summary overvoltage crowbar protection, motor control circuits in power tools and kitchen appliances and inrush current limiting circuits. Order code TN2015H-6I Package TO-220AB Ins. I 20 A T(RMS) V /V 600 V DRM RRM T max. 150 C j DS13203 - Rev 1 - December 2019 www.st.com For further information contact your local STMicroelectronics sales office.TN2015H-6I Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values), T = 25 C unless otherwise specified j Symbol Parameter Value Unit I T = 113 C RMS on-state current (180 conduction angle) 20 A T(RMS) c T = 112 C 13 c I T = 130 C Average on-state current (180 conduction angle) 8 A T(AV) c T = 139 C 5 c t = 8.3 ms 197 p I Non repetitive surge peak on-state current (T initial = 25 C) A TSM j t = 10 ms p 180 2 2 2 I t value for fusing, (T initial = 25 C) t = 10 ms 162 I t p A s j I = 2 x I , tr 100 ns G GT dl/dt f = 60 Hz 100 A/s Critical rate of rise of on-state current V /V Repetitive peak off-state voltage 600 V DRM RRM V /V t = 10 ms V /V + 100 V Non Repetitive peak off-state voltage V DSM RSM p DRM RRM I Peak gate current t = 20 s T = 150 C 4 A GM p j P Average gate power dissipation T = 150 C 1 W G(AV) j V Maximum peak reverse voltage 5 V RGM T Storage junction temperature range -40 to +150 C stg T Maximum operating junction temperature -40 to +150 C j T Maximum lead temperature soldering during 10 s 260 C l V Insulation rms voltage, 1 minute 2500 V iso Table 2. Electrical characteristics (T = 25 C unless otherwise specified) j Symbol Test conditions Value Unit Typ. 6 I mA GT V = 12 V, R = 33 Max. 15 D L V Max. 1.3 V GT V V = V , R = 3.3 k T = 150 C Min. 0.1 V GD D DRM L j I I = 500 mA, gate open Max. 50 mA H T I I = 1.2 x I L G GT Max. 60 mA V = 402 V, gate open T = 150 C dV/dt Min. 750 V/s D j t I = 40 A, V = 402 V, I = 20 mA, (dI /dt) max = 0.2 A/s Typ. 1.9 s gt T D G G t I = 20 A, V = 402 V, (dI /dt) max = 30 A/s, V = 25 V, dV /dt = 40 V/s T = 150 C Typ. 70 s q T D G R D j DS13203 - Rev 1 page 2/10