TN6050-12WL Datasheet 60 A - 1200 V SCR in TO-247LL package Features A Max. repetitive blocking voltage = V , V = 1200 V DRM RRM I maximum = 50 mA GT G RMS on state current I = 60 A TRMS K High static and dynamic commutation: dI/dt = 100 A/s dV/dt = 2000 V/s ECOPACK2 component (RoHS and HF compliance) Applications Solar / Wind renewable energy inverters and rectifiers G Solid state relay (SSR) A Uninterruptible power supply (UPS) K Industrial SMPS TO-247LL Bypass Backside: anode AC DC inrush current limiter (ICL) AC DC voltage controlled rectifier Battery charger Industrial welding systems Soft starter Product status Heating systems TN6050-12WL Description Product summary The TN6050-12WL SCR is suitable in industrial application where high immunity is I 60 A T(RMS) required with a lower gate current. I 38 A T(AV) Available in through-hole high power package TO-247LL (long lead) with anode in backside. V /V 1200 V DRM RRM I max. 50 mA GT Package TO-247LL DS13217 - Rev 1 - February 2020 www.st.com For further information contact your local STMicroelectronics sales office.TN6050-12WL Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values) Symbol Parameter Value Unit I On-state RMS current (180 conduction angle) 60 T(RMS) T = 99 C A c I Average on-state current (180 conduction angle) 38 T(AV) t = 8.3 ms 767 p I Non repetitive surge peak on-state current ( T initial = 25 C), V = 0 V A TSM j R t = 10 ms 700 p 2 2 2 t = 10 ms 2450 I t I t value for fusing p A s Critical rate of rise of on-state current dl/dt T = 25 C 100 A/s j I = 100 mA, dI /dt = 1 A/s G g I Maximum peak positive gate current 8 A GM t = 20 s T = 125 C p j V Maximum peak positive gate voltage 5 V GM P Average gate power dissipation T = 125 C 1 W G(AV) j V Maximum peak reverse gate voltage 3.5 V RGM T Storage junction temperature range -40 to +150 stg C T Operating junction temperature range -40 to +125 j Table 2. Electrical characteristics (T = 25 C unless otherwise specified) j Symbol Test conditions Value Unit Min. 8 I mA GT V = 12 V, R = 33 Max. 50 D L V Max. 1.3 V GT V V = V , R = 3.3 k T = 125 C Min. 0.2 V GD D DRM L j I I = 500 mA, gate open Max. 100 mA H T I I = 1.2 x I Max. 130 mA L G GT V = 67% V , gate open T = 125 C dV/dt D DRM j Min. 2 kV/s t I = 120 A, V = 67% V , I = 100 mA, (dI /dt) max = 0.2 A/s Typ. 2 s gt T D DRM G G I = 60 A, V = 67% V (800 V), dl /dt = 30 A/s, V = 25 V, dV/dt = 200 T D DRM TM R t T = 125 C Typ. 100 s q j V/s Table 3. Static characteristics Symbol Test conditions Value Unit V I = 120 A, t = 380 s T = 25 C Max. 1.75 TM TM p j V V T = 125 C Threshold voltage Max. 0.93 TO j R T = 125 C Dynamic resistance Max. 7.1 m D j T = 25 C 10 A j I , I V = V = 1200 V Max. DRM RRM DRM RRM T = 125 C 6.5 mA j DS13217 - Rev 1 page 2/10