TYN610RG STMicroelectronics

TYNx10 Series 10A SCR STANDARD Table 1: Main Features A Symbol Value Unit I 10 A T(RMS) G K V /V 400, 600 and 800 V DRM RRM A I 15 mA GT DESCRIPTION K A G The TYNx10 Silicon Controlled Rectifiers is a high performance glass passivated technology. TO-220AB This general purpose Silicon Controlled Rectifiers Table 2: Order Codes is designed for power supply up to 400Hz on resis- Part Numbers Marking tive or inductive load. TYN410RG TYN410 TYN610RG TYN610 TYN810RG TYN810 Table 3: Absolute Ratings (limiting values) Symbol Parameter Value Unit I T = 100C RMS on-state current (180 conduction angle) 10 A T(RMS) c IT T = 100C Average on-state current (180 conduction angle) 6.4 A (AV) c t = 8.3 ms 105 p Non repetitive surge peak on-state I T = 25C A TSM j current t = 10 ms 100 p 2 t = 10 ms T = 25C 50 ItI t Value for fusing A S p j Critical rate of rise of on-state current T = 125C dI/dt 50 A/s j I = 100 mA , dI /dt = 0.1 A/s G G I t = 20 s T = 125C Peak gate current 4A GM p j P T = 125C Average gate power dissipation 1W G(AV) j P = 20 s T = 125C Maximum gate power t 10 W GM p j TYN410 400 V DRM T = 125C Repetitive peak off-state voltage TYN610 600 V j V RRM TYN810 800 T - 40 to + 150 stg Storage junction temperature range C Operating junction temperature range T - 40 to + 125 j T Maximum lead temperature for soldering during 10s at 2mm from case 260 C L February 2006 REV. 2 1/6TYNx10 Series Tables 4: Electrical Characteristics (T = 25C, unless otherwise specified) j Symbol Test Conditions Value Unit I MAX. 15 mA GT V = 12 V (D.C.) R = 33 D L V MAX. 1.5 V GT V V = V R = 3.3 k T = 110C MIN. 0.2 V GD D DRM L j t V = V I = 40 mA dI /dt = 0.5 A/s TYP. 2 s gt D DRM G G I I = 100 mA Gate open MAX. 30 mA H T I I = 1.2 x I TYP. 50 mA L G GT Linear slope up to: T = 110C dV/dt MIN. 200 V/s j V = 67 % V Gate open D DRM V I = 20 A tp = 380 s MAX. 1.6 V TM TM T = 25C 10 A I j DRM V = V MAX. DRM RRM I T = 110C RRM 2mA j t V = 67 % V I = 20 A V = 25 V q D DRM TM R T = 110C TYP. 70 s j dI /dt = 30 A/s dV /dt = 50 V/s TM D Table 5: Thermal Resistance Symbol Parameter Value Unit R Junction to case (D.C.) 2.5 C/W th(j-c) R Junction to ambient 60 C/W th(j-a) Figure 1: Maximum average power dissipation Figure 2: Correlation between maximum versus average on-state current average power dissipation and maximum allowable temperature (T and T ) amb lead P(W) P(W) Tcase(C) 12 12 Rth = 6C/W Rth = 4C/W Rth = 2C/W Rth = 0C/W = 180 10 DC 100 10 = 180 = 120 = 90 8 8 105 = 60 6 110 6 = 30 4 4 115 360 2 2 120 I (A) T(AV) T (C) amb 125 0 0 0 20 40 60 80 100 120 140 0 1234 5 6798 2/6