Thyristors Surface Mount 600V - 800V > MCR8DCM, MCR8DCN Pb MCR8DCM, MCR8DCN Description Designed for high volume, low cost, industrial and consumer applications such as motor control process control temperature, light and speed control. Features Small Size Body Model, 3B > 8000 V Machine Model, C > 400 V Passivated Die for Reliability and Uniformity PbFree Packages are Available Low Level Triggering and Holding Characteristics Available in Two Package Styles Surface Mount Lead Form Case 369C Epoxy Meets UL 94 V0 0.125 in ESD Ratings: Human Pin Out Functional Diagram 4 G A K 1 2 3 Additional Information Datasheet Resources Samples 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/25/19Thyristors Surface Mount 600V - 800V > MCR8DCM, MCR8DCN Maximum Ratings (T = 25C unless otherwise noted) J Rating Symbol Value Unit Peak Repetitive OffState Voltage (Note 1) MCR8DCM V , 600 DRM V ( 40 to 1125C, Sine Wave, 50 to 60 Hz, Gate Open) MCR8DCN V 800 RRM On-State RMS Current (180Conduction Angles T = 105C) I 8.0 A C T (RMS) Average OnState Current (180 Conduction Angles T = 105C) I 5.1 A C T(AV) Peak Non-Repetitive Surge Current I 80 A TSM (1/2 Cycle, Sine Wave 60 Hz, TJ = 110C) 2 Circuit Fusing Consideration (t = 8.3 ms) I t 26 Asec Forward Peak Gate Power (Pulse Width 10 sec,T = 105C) P 5.0 W C GM Forward Average Gate Power (t = 8.3 msec, T = 105C) P 0.5 W C GM (AV) Forward Peak Gate Current (Pulse Width 1.0 sec, T = 105C) I 2.0 A C GM Operating Junction Temperature Range T -40 to 125 C J Storage Temperature Range T -40 to 150 C stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V and V for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage however, positive gate voltage shall not be applied concurrent DRM RRM with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol Value Unit Thermal Resistance, JunctiontoCase R 2.2 JC C/W Thermal Resistance, JunctiontoAmbient R 88 JA Thermal Resistance, JunctiontoAmbient (Note 2) R 80 JA Maximum Device Temperature for Soldering Purposes (Note 3) T 260 C L Electrical Characteristics - OFF (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit T = 25C - - 0.01 Peak Repetitive Forward or Reverse Blocking Current (Note 3) J I , DRM mA (V = Rated V or V , R = 1.0 k I AK DRM RRM GK T = 125C RRM - - 5.0 J Electrical Characteristics - ON (T = 25C unless otherwise noted Electricals apply in both directions) J Characteristic Symbol Min Typ Max Unit Peak OnState Voltage (Note 4) (I = 16 A) V 1.4 1.8 V TM TM Gate Trigger Current (Continuous dc) (Note 5) (T = 25C) 2.0 7.0 15 J I A GT (V = 12 Vdc, R = 100 ) (T = 40C) 30 AK L J Gate Trigger Voltage (Continuous dc) ( T = 25C) 0.5 0.65 1.0 J (V = 12 V, R = 100 ) (T = 40C) V 2.0 V D L J GT (V = 12 V, R = 100 ) (Note 5) (T = 125C) 0.2 D L J Holding Current ( T = 25C) 4.0 22 30 J mA (V = 12 V, Initiating Current = 200 mA, R = 1 k) (T = 40C) I 60 D GK J H Latching Current (T = 25C) 4.0 22 30 J I mA L (V = 12 V, IG = 2.0 mA, R = 1 k) (T = 40C) 60 D GK J Dynamic Characteristics Characteristic Symbol Min Typ Max Unit Critical Rate of Rise of OffState Voltage dv/dt 50 200 V/s (V = Rated V , Exponential Waveform, Gate Open, T = 125C) AK DRM J Critical Rate of Rise of OnState Current di/dt 50 A/ms (IPK = 50 A, Pw = 40 sec, diG/dt = 1 A/sec, Igt = 50 mA 2. Surface mounted on minimum recommended pad size. 3 1/8 from case for 10 seconds. 4. Pulse Test Pulse Width 2.0 msec, Duty Cycle 2%. 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/25/19