MCT2M, MCT2EM, MCT210M, MCT271M Phototransistor Optocouplers
September 2009
MCT2M, MCT2EM, MCT210M, MCT271M
Phototransistor Optocouplers
Features Description
UL recognized (File # E90700, Vol. 2) The MCT2XXM series optoisolators consist of a gallium
arsenide infrared emitting diode driving a silicon
IEC60747-5-2 recognized (File # 102497)
phototransistor in a 6-pin dual in-line package.
Add option V (e.g., MCT2VM)
Applications
Power supply regulators
Digital logic inputs
Microprocessor inputs
Schematic Package Outlines
Anode 1 6 Base
Cathode 2 5 Collector
No Connection 3 4 Emitter
2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3MCT2M, MCT2EM, MCT210M, MCT271M Phototransistor Optocouplers
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol Parameter Value Units
TOTAL DEVICE
T Storage Temperature -40 to +150 C
STG
T Operating Temperature -40 to +100 C
OPR
T Lead Solder Temperature 260 for 10 sec C
SOL
Total Device Power Dissipation @ T = 25C 250 mW
P
D A
Derate above 25C 2.94 mW/C
EMITTER
I DC/Average Forward Input Current 60 mA
F
V Reverse Input Voltage 3 V
R
I (pk) Forward Current Peak (300s, 2% Duty Cycle) 3 A
F
LED Power Dissipation @ T = 25C 120 mW
P
D A
Derate above 25C 1.41 mW/C
DETECTOR
I Collector Current 50 mA
C
Collector-Emitter Voltage 30 V
V
CEO
P Detector Power Dissipation @ T = 25C 150 mW
D A
Derate above 25C 1.76 mW/C
2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3 2