MCR8DSNT4G ON Semiconductor

MCR8DSM, MCR8DSN Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer MCR8DSM, MCR8DSN THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance JunctiontoCase R 2.2 C/W JC JunctiontoAmbient R 88 JA JunctiontoAmbient (Note 2) R 80 JA Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds T 260 C L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristics Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current I A DRM (V = Rated V or V R = 1.0 k ) (Note 3) T = 25C I 10 AK DRM RRM GK J RRM T = 110C 500 J ON CHARACTERISTICS Peak Reverse Gate Blocking Voltage (I = 10 A) V 10 12.5 18 V GR GRM Peak Reverse Gate Blocking Current (V = 10 V) I 1.2 A GR RGM Peak Forward OnState Voltage (Note 4) (I = 16 A) V 1.4 1.8 V TM TM Gate Trigger Current (Continuous dc) (Note 5) I A GT (V = 12 V, R = 100 )T = 25C 5.0 12 200 D L J T = 40C 300 J Gate Trigger Voltage (Continuous dc) (Note 5) V V GT (V = 12 V, R = 100 )T = 25C 0.45 0.65 1.0 D L J T = 40C 1.5 J T = 110C 0.2 J Holding Current I mA H (V = 12 V, Initiating Current = 200 mA, R = 1 k )T = 25C 0.5 1.0 6.0 D GK J T = 40C 10 J Latching Current I mA L (V = 12 V, I = 2.0 mA, R = 1 k )T = 25C 0.5 1.0 6.0 D G GK J T = 40C 10 J Total TurnOn Time tgt s (Source Voltage = 12 V, R = 6.0 k , I = 16 A(pk), R = 1.0 k ) 2.0 5.0 S T GK (V = Rated V , Rise Time = 20 ns, Pulse Width = 10 s) D DRM DYNAMIC CHARACTERISTICS Critical Rate of Rise of OffState Voltage dv/dt V/ s (V = 0.67 X Rated V , Exponential Waveform, 2.0 10 D DRM R = 1.0 k , T = 110C) GK J 2. Surface mounted on minimum recommended pad size. 3. Ratings apply for negative gate voltage or R = 1.0 k . Devices shall not have a positive gate voltage concurrently with a negative voltage GK on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. 4. Pulse Test Pulse Width 2.0 msec, Duty Cycle 2%. 5. R current not included in measurements. GK ORDERING INFORMATION Device Package Shipping MCR8DSMT4 DPAK DPAK MCR8DSMT4G (Pb Free) 2500 / Tape & Reel MCR8DSNT4 DPAK MCR8DSNT4G DPAK (Pb Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.