X-On Electronics has gained recognition as a prominent supplier of MCR8DSNT4G SCRs across the USA, India, Europe, Australia, and various other global locations. MCR8DSNT4G SCRs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

MCR8DSNT4G ON Semiconductor

MCR8DSNT4G electronic component of ON Semiconductor
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See Product Specifications
Part No.MCR8DSNT4G
Manufacturer: ON Semiconductor
Category: SCRs
Description: Thyristor SCR 800V 90A 3-Pin(2+Tab) DPAK T/R
Datasheet: MCR8DSNT4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.479 ea
Line Total: USD 1197.5 
Availability - 0
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.479

   
Manufacturer
Product Category
Packaging
Gate Trigger Current
Gate Trigger Voltage
Mounting
Operating Temp Range
Package Type
Peak Surge On-State Current Max
Peak Reverse Gate Voltage
Peak Repeat Off Current
Repetitive Peak Off-State Volt
Average On-State Current
Pin Count
Type
Off-State Voltage
Operating Temperature Classification
On State Voltage Max
Hold Current
Rad Hardened
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We are delighted to provide the MCR8DSNT4G from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MCR8DSNT4G and other electronic components in the SCRs category and beyond.

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MCR8DSM, MCR8DSN Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer MCR8DSM, MCR8DSN THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance JunctiontoCase R 2.2 C/W JC JunctiontoAmbient R 88 JA JunctiontoAmbient (Note 2) R 80 JA Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds T 260 C L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristics Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current I A DRM (V = Rated V or V R = 1.0 k ) (Note 3) T = 25C I 10 AK DRM RRM GK J RRM T = 110C 500 J ON CHARACTERISTICS Peak Reverse Gate Blocking Voltage (I = 10 A) V 10 12.5 18 V GR GRM Peak Reverse Gate Blocking Current (V = 10 V) I 1.2 A GR RGM Peak Forward OnState Voltage (Note 4) (I = 16 A) V 1.4 1.8 V TM TM Gate Trigger Current (Continuous dc) (Note 5) I A GT (V = 12 V, R = 100 )T = 25C 5.0 12 200 D L J T = 40C 300 J Gate Trigger Voltage (Continuous dc) (Note 5) V V GT (V = 12 V, R = 100 )T = 25C 0.45 0.65 1.0 D L J T = 40C 1.5 J T = 110C 0.2 J Holding Current I mA H (V = 12 V, Initiating Current = 200 mA, R = 1 k )T = 25C 0.5 1.0 6.0 D GK J T = 40C 10 J Latching Current I mA L (V = 12 V, I = 2.0 mA, R = 1 k )T = 25C 0.5 1.0 6.0 D G GK J T = 40C 10 J Total TurnOn Time tgt s (Source Voltage = 12 V, R = 6.0 k , I = 16 A(pk), R = 1.0 k ) 2.0 5.0 S T GK (V = Rated V , Rise Time = 20 ns, Pulse Width = 10 s) D DRM DYNAMIC CHARACTERISTICS Critical Rate of Rise of OffState Voltage dv/dt V/ s (V = 0.67 X Rated V , Exponential Waveform, 2.0 10 D DRM R = 1.0 k , T = 110C) GK J 2. Surface mounted on minimum recommended pad size. 3. Ratings apply for negative gate voltage or R = 1.0 k . Devices shall not have a positive gate voltage concurrently with a negative voltage GK on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. 4. Pulse Test Pulse Width 2.0 msec, Duty Cycle 2%. 5. R current not included in measurements. GK ORDERING INFORMATION Device Package Shipping MCR8DSMT4 DPAK DPAK MCR8DSMT4G (Pb Free) 2500 / Tape & Reel MCR8DSNT4 DPAK MCR8DSNT4G DPAK (Pb Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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