VNQ660SPTR-E STMicroelectronics

VNQ660SP Quad channel high side solid state relay Features Type R I V DS(on) OUT CC 10 (1) VNQ660SP 50m 6A 36V 1. Per each channel. 1 PowerSO-10 CMOS compatible inputs Off state open load detection Undervoltage and overvoltage shutdown Description Overvoltage clamp The VNQ660SP is a monolithic device made by Thermal shutdown using STMicroelectronics VIPower M0-3 Technology, intended for driving resistive or Current limitation inductive loads with one side connected to Very low standby power dissipation ground. Protection against loss of ground and loss of This device has four independent channels. Built- V CC in thermal shutdown and output current limitation (a) Reverse battery protection protect the chip from over temperature and short circuit. a. See Application schematic on page 16 Table 1. Device summary Order codes Package Tube Tape and reel PowerSO-10 VNQ660SP VNQ660SP13TR September 2013 Rev 6 1/26 www.st.com 26Contents VNQ660SP Contents 1 Block diagram and pin description . 5 2 Electrical specifications 6 2.1 Absolute maximum ratings . 6 2.2 Thermal data . 6 2.3 Electrical characteristics . 7 2.4 Electrical characteristics curves 13 3 Application information . 16 3.1 GND protection network against reverse battery . 16 3.1.1 Solution 1: a resistor in the ground line (RGND only) 16 3.1.2 Solution 2: a diode (D ) in the ground line 17 GND 3.2 Load dump protection 17 3.3 MCU I/O protection 17 3.4 Maximum demagnetization energy (V = 13.5V) 18 CC 4 Package and PCB thermal data . 19 4.1 PowerSO-10 thermal data 19 5 Package and packing information . 22 5.1 ECOPACK packages . 22 5.2 PowerSO-10 mechanical data . 22 5.3 PowerSO-10 packing information . 24 6 Revision history . 25 2/26