X-On Electronics has gained recognition as a prominent supplier of X00619MA2AL2 SCRs across the USA, India, Europe, Australia, and various other global locations. X00619MA2AL2 SCRs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

X00619MA2AL2 STMicroelectronics

X00619MA2AL2 electronic component of STMicroelectronics
X00619MA2AL2 STMicroelectronics
X00619MA2AL2 SCRs
X00619MA2AL2  Semiconductors

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See Product Specifications
Part No. X00619MA2AL2
Manufacturer: STMicroelectronics
Category: SCRs
Description: STMicroelectronics SCRs 0.8 A sensitive Gate SCR
Datasheet: X00619MA2AL2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.3537 ea
Line Total: USD 1.35 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 1
Multiples : 1
1 : USD 1.3537
10 : USD 0.6122
100 : USD 0.3038
500 : USD 0.2277

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Rated Repetitive Off-State Voltage VDRM
On-State RMS Current - It RMS
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Holding Current Ih Max
Mounting Style
Package / Case
Packaging
Series
Minimum Operating Temperature
Maximum Operating Temperature
Off-State Leakage Current Vdrm Idrm
Brand
Non Repetitive On-State Current
Factory Pack Quantity :
Cnhts
Hts Code
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We are delighted to provide the X00619MA2AL2 from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the X00619MA2AL2 and other electronic components in the SCRs category and beyond.

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X00619 Datasheet 0.8 A - 600 V sensitive gate SCR A Features On-state rms current, I 0.8 A T(RMS) G Repetitive peak off-state voltage 600 V K Triggering gate current from 30 to 200 A ECOPACK2 compliant Applications A A G G K K Limited gate current topologies TO-92 (straight) TO-92 (preform) A Ground fault circuit interrupters Overvoltage crowbar protection in power supplies G Protection in electronic ballasts A K Capacitive discharge ignitions SOT-223 Ignitors (lighting, oven...) Description The X00619 SCR can be used as on/off function in applications where topology does not offer high current for gate triggering. This device is optimized in forward voltage drop and inrush current capabilities for reduced power losses and high reliability in harsh environments. Product status link TO92 straight leads (bulk packing) TO92 leads preform X00619 (tape and reel or ammopack packing) SOT-223 (tape and reel packing) Product summary I up to 0.8 A T(RMS) V /V DRM RRM 600 V I From 30 to 200 A GT T max. 125 C j DS6289 - Rev 4 - December 2021 www.st.com For further information contact your local STMicroelectronics sales office.X00619 Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values, T = 25 C unless otherwise specified) j Symbol Parameters Value Unit T = 83 C TO-92 L I On-state RMS current (180 conduction angle) 0.8 A T(RMS) T = 107 C SOT-223 amb T = 83 C TO-92 L I Average on-state current (180 conduction angle) 0.5 A T(AV) SOT-223 T = 107 C amb t = 8.3 ms 10 Non repetitive surge peak on-state current, p I T = 25 C A TSM j T initial = 25 C j t = 10 ms 9 p 2 2 2 t = 10 ms T = 25 C I t I t value for fusing 0.4 A s p j Critical rate of rise of on-state current T = 125 C dl/dt F = 60 Hz 50 A/s j I = 2 x I , t 100 ns G GT r I t = 20 s T = 125 C Peak gate current 1 A GM p j P T = 125 C Average gate power dissipation 0.1 W G(AV) j T Storage junction temperature range -40 to +150 C stg T Operating junction temperature range -40 to +125 C j Table 2. Electrical characteristics (T = 25 C, unless otherwise specified) j Symbol Parameters Value Unit Min. 30 I A GT V = 12 V, R = 140 Max. 200 D L V Max. 0.8 V GT V V = V , R = 3.3 k, R = 1 k, T = 125 C Min. 0.2 V GD D DRM L GK j V I = 10 A Min. 5 RG RG I I = 50 mA, RGK = 1 k Max. 5 mA H T I I = 1 mA, R = 1 k Max. 6 mA L G GK V = 67 % V , R = 1 k, T = 125 C dV/dt Min. 40 V/s D DRM GK j Table 3. Static electrical characteristics Symbol Test conditions Value Unit V I = 1 A, t = 380 s 25 C Max. 1.35 V TM TM p V Threshold on-state voltage 125 C Max. 0.85 V TO R Dynamic resistance 125 C Max. 245 m d I V = V , R = 1 k 25 C 1 DRM RRM GK DRM Max. A I V = V , R = 1 k 125 C 100 RRM DRM RRM GK DS6289 - Rev 4 page 2/13

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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