VS-ST103SP Series www.vishay.com Vishay Semiconductors Inverter Grade Thyristors (Stud Version), 105 A FEATURES All diffused design Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt High surge current capability TO-94 (TO-209AC) Low thermal impedance High speed performance Compression bonding PRIMARY CHARACTERISTICS Designed and qualified for industrial level Package TO-94 (TO-209AC) Material categorization: for definitions of compliance Circuit configuration Single SCR please see www.vishay.com/doc 99912 I 105 A T(AV) V /V 400 V, 800 V DRM RRM TYPICAL APPLICATIONS V 1.73 V TM Inverters I at 50 Hz 3000 A TSM Choppers I at 60 Hz 3150 A TSM Induction heating I 200 mA GT All types of force-commutated converters T /T 85 C C hs MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS 105 A I T(AV) T 85 C C I 165 T(RMS) 50 Hz 3000 A I TSM 60 Hz 3150 50 Hz 45 2 2 I t kA s 60 Hz 41 V /V 400 to 800 V DRM RRM t Range 10 to 25 s q T -40 to 125 C J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V /V , MAXIMUM V , MAXIMUM I /I MAXIMUM DRM RRM RSM DRM RRM VOLTAGE TYPE NUMBER REPETITIVE PEAK VOLTAGE NON-REPETITIVE PEAK VOLTAGE AT T = T MAXIMUM J J CODE V V mA 04 400 500 VS-ST103S 30 08 800 900 Revision: 24-Jan-18 Document Number: 94365 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-ST103SP Series www.vishay.com Vishay Semiconductors CURRENT CARRYING CAPABILITY I TM I I TM TM FREQUENCY UNITS 180 el 100 s 180 el 50 Hz 280 180 440 330 4730 3630 400 Hz 310 200 470 300 2500 1850 A 1000 Hz 320 200 480 310 1530 1090 2500 Hz 340 210 490 320 840 580 Recovery voltage V 50 50 50 r V Voltage before turn-on V V V V d DRM DRM DRM Rise of on-state current dI/dt 50 - - A/s Case temperature 60 8560856085 C Equivalent values for RC circuit 22/0.15 22/0.15 22/0.15 F ON-STATE CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 105 A Maximum average on-state current I 180 conduction, half sine wave T(AV) at case temperature 85 C Maximum RMS on-state current I DC at 76 C case temperature 165 T(RMS) t = 10 ms 3000 No voltage reapplied t = 8.3 ms 3150 A Maximum peak, one half cycle, I TSM non-repetitive surge current t = 10 ms 2530 100 % V RRM reapplied t = 8.3 ms 2650 Sinusoidal half wave, initial T = T maximum J J t = 10 ms 45 No voltage reapplied t = 8.3 ms 41 2 2 2 Maximum I t for fusing I t kA s t = 10 ms 32 100 % V RRM reapplied t = 8.3 ms 29 2 2 2 Maximum I t for fusing I t t = 0.1 to 10 ms, no voltage reapplied 450 kA s I = 300 A, T = T maximum, TM J J Maximum peak on-state voltage V 1.73 TM t = 10 ms sine wave pulse p (16.7 % x x I < I < x I ), V T(AV) T(AV) Low level value of threshold voltage V 1.32 T(TO)1 T = T maximum J J High level value of threshold voltage V (I > x I ), T = T maximum 1.35 T(TO)2 T(AV) J J (16.7 % x x I < I < x I ), T(AV) T(AV) Low level value of forward slope resistance r 1.40 t1 T = T maximum J J m High level value of forward slope r (I > x I ), T = T maximum 1.30 t2 T(AV) J J resistance Maximum holding current I T = 25 C, I > 30 A 600 H J T mA Typical latching current I T = 25 C, V = 12 V, R = 6 , I = 1 A 1000 L J A a G SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum non-repetitive rate of dI/dt T = T maximum, V = Rated V , I = 2 x dI/dt 1000 A/s J J DRM DRM TM rise of turned on current T = 25 C, V = Rated V , I = 50 A DC, t = 1 s J DM DRM TM p Typical delay time t 0.80 d Resistive load, gate pulse: 10 V, 5 source s minimum 10 T = T maximum, I = 100 A, commutating dI/dt = 10 A/s J J TM Maximum turn-off time t q V = 50 V, t = 200 s, dV/dt: See table in device code maximum R p 25 Revision: 24-Jan-18 Document Number: 94365 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000