X0115MUF Datasheet 1 A sensitive gate SCR thyristor A Features On-state rms current, 1 A G Narrow sensitive gate current from 30 A to 150 A Repetitive peak off-state voltage, 600 V K Non-repetitive surge peak off-state voltage, 750 V A Compact and ultraflat SMBflat-3L package with creepage distance of 3.4 mm K G Applications SMBflat-3L Ground-fault circuit interrupter (GFCI, RCB, RCD) Arc-fault circuit interrupter (AFCI) Overvoltage crowbar protection in power supplies Capacitive ignition circuits Low consumption triggering switches Description Thanks to highly sensitive triggering levels, the 1 A X0115MUF SCR thyristor is suitable for all applications where available gate current is limited. The X0115MUF offers a high blocking voltage of 600 V, and a surge peak voltage of 750 V, ideal for applications like ground fault circuit interrupter (GFCI) and arc fault circuit interrupters (AFCI). The surface mount SMBflat-3L package allows modern, compact, SMD based Product status link designs for automated manufacturing. Its 3.4 mm creepage distance guarantees a X0115MUF 250 V functional isolation (UL 840) at a level 2 pollution degree. Product summary I 1 A T(RMS) V /V 600 V DRM RRM T 125 C j(max.) DS13078 - Rev 2 - October 2019 www.st.com For further information contact your local STMicroelectronics sales office.X0115MUF Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values) Symbol Parameters Value Unit I On-state RMS current (180 conduction angle) 1 A T(RMS) T = 113 C l I Average on-state current (180 conduction angle) 0.64 A T(AV) t = 8.3 ms 12 Non repetitive surge peak on-state current p I T = 25 C A TSM j (T initial = 25 C) t = 10 ms j 11 p 2 2 2 t = 10 ms T = 25 C 0.60 I t I t value for fusing p j A s Critical rate of rise of on-state current T = 25 C dl/dt F = 60 Hz 75 A/s j I = 2 x I , t 100 ns G GT r V / V Repetitive peak off-state voltage T = 125 C 600 V DRM RRM j V / V Non repetitive surge peak off-state voltage t = 10 ms T = 25 C 750 V DSM RSM p j I Peak forward gate current t = 20 s T = 125 C 1.2 A GM p j P T = 125 C Average gate power dissipation 0.2 W G(AV) j T Storage junction temperature range -40 to +150 C stg T Operating junction temperature range -40 to +125 C j Table 2. Electrical characteristics (T = 25 C, unless otherwise specified) j Symbol Parameters Value Unit Min. 30 I A GT V = 12 V, R = 140 Max. 150 D L V Max. 0.8 V GT V V = V , R = 3.3 k, R = 1 k, T = 125 C Min. 0.2 V GD D DRM L GK j V I = 10 A Min. 5 V RG RG I I = 50 mA, R = 1 k Max. 5 mA H T GK I I = 1.2 I , R = 1 k L G GT GK Max. 6 mA V = 67 % V , R = 1 k, T = 125 C dV/dt Min. 80 V/s D DRM GK j Table 3. Static characteristics Symbol Test conditions Value Unit V I = 2.0 A, t = 380 s T = 25 C Max. 1.40 V T TM p j V T = 125 C Threshold on-state voltage Max. 0.90 V TO j R T = 125 C Dynamic resistance Max. 230 m d j T = 25 C 1 A j I / I V = V , V = V , R = 1 k Max. DRM RRM D DRM R RRM GK T = 125 C 150 A j DS13078 - Rev 2 page 2/11