1N4148WS-G RVG Taiwan Semiconductor

1N4148WS-G Taiwan Semiconductor Small Signal Product Switching Diode FEATURES - Surface Mounted Device - Fast Switching Speed - Moisture sensitivity level (MSL): 1 - Pb free and RoHS compliant SOD-323 MECHANICAL DATA - Case: Bend lead SOD-323 package - High temperature soldering guaranteed: 260C/10s - Weight: 4.5mg (approximately) - Marking: T4 APPLICATION General purpose switching application MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT V Peak reverse voltage 100 V RM DC blocking voltage V 75 V R Non-repettive peak forward current I 300 mA FM Average rectified output current I 150 mA O I Peak forward surge current t=1s 2.0 A FSM P 200 Power dissipation mW D Junction temperature T 150 C J Storage temperature T - 55 to +150 C STG PARAMETER TEST CONDITION SYMBOL MIN TYP MAX UNIT I = 1mA V 0.715 V F F1 V I = 10mA 0.885 V F2 F Forward voltage I = 50mA V 1V F F3 V I = 150mA 1.25 V F4 F I V =75V R 1 A R1 Reverse leakage current V =20V I 25 nA R R2 Capacitance between terminals C V =0V , f=1MHz 2pF T R I =I =10mA, I =0.1 I , F R rr R Reverse recovery time t 4.0 ns rr R =100 L Version: B141N4148WS-G Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (T =25C unless otherwise noted) A Fig. 1 Typical Reverse Characteristics Fig.2 Typical Forward Characteristics 1000 1000 Ta=100C 100 Ta=100C 100 10 Ta=25C 1 Ta=25C 10 0.1 1 0.01 0 20 406080 0 0.2 0.4 0.6 0.8 1 1.2 Forward Voltage (mV) Reverse Voltage (V) Fig. 3 Power Derating Curve Fig. 4 Typical Capacitance Characteristics 300 1.2 T = 25 250 f = 1 MHz 200 150 1 100 50 0 0.8 0 25 50 75 100 125 150 0 5 10 15 20 Reverse Voltage (V) Ambient Temperature (C) Version: B14 Power Disspation (mW) Reverse Current (mA) Forward Current (mA) Junction Capacitance (pF)