ARS50D Taiwan Semiconductor

ARS50 SERIES 50 AMPS. High Current Button Rectifiers ARS RoRoHSHS Pb COCOMMPPLILIAANCENCE Features Plastic material used carries Underwriters Laboratory Classification 94V-0 Low cost construction utilizing void-free molded plastic technique Low cost Diffused junction Low leakage High surge capability High temperature soldering guaranteed: 260 for 10 seconds Green compound with suffix on packing code & prefix on datecode Dimensions in inches and (millimeters) Mechanical Data Case: Molded plastic case Marking Diagram ARS50X= Specific Device Code Terminals: Pure tin plated, lead free, solderable per MIL-STD-202, Method 208 G = Green Compound Polarity: Color ring denotes cathode Y = Year Weight: 1.8 grams M = Work Month Mounting position: Any Maximum Ratings and Electrical Characteristics Rating at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% ARS ARS ARS ARS ARS ARS ARS Symbol Units Type Number 50A 50B 50D 50G 50J 50K 50M Maximum Recurrent Peak Reverse Voltage V 50 100 200 400 600 800 1000 V RRM Maximum RMS Voltage V 35 70 140 280 420 560 700 V RMS Maximum DC Blocking Voltage V 50 100 200 400 600 800 1000 V DC Maximum Average Forward Rectified Current I 50 A F(AV) T =135 C Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) I 500 A FSM at T =150 J Maximum Instantaneous Forward Voltage (Note 1) V 1.1 V F 50A 5 Maximum DC Reverse Current at T =25 uA A I R Rated DC Blocking Voltage T =125 A 250 uA Typical Reverse Recovery Time (Note 2) 3.0 Trr uS Typical Junction Capacitance (Note 3) 300 Cj pF O R Typical Thermal Resistance (Note 4) 1.0 JC C/W O Operating and Storage Temperature Range T , T - 50 to + 175 J STG C Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle Note 2: Reverse Recovery Time Test Conditions: I =0.5A, I =1.0A, I =0.25A F R RR Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Note 4: Thermal Resistance from Junction to Case, Singe Side Cooled. Version:C10RATINGS AND CHARACTERISTIC CURVES (ARS50 SERIES) FIG.1- MAXMUM FORWARD CURRENT DERATING FIG. 2- TYPICAL REVERSE CHARACTERISTICS CURVE 60 100 RESISTIVE OR 50 INDUCTIVE LOAD TA=125 40 30 10 20 10 0 1 125 135 145 155 165 175 o TA=25 CASE TEMPERATURE( C) 0.1 0 20 40 60 80 100 120 140 FIG. 3- MAXIMUM NON-REPETITIVE PEAK PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FORWARD SURGE CURRENT 1000 8.3ms Single Half Sine Wave JEDEC method TA=25 100 FIG. 5- TYPICAL FORWARD CHARACTERISTICS 1000 10 1 10 100 NUMBER OF CYCLES AT 60 Hz 100 FIG. 4- TYPICAL JUNCTION CAPACITANCE 10 1000 TA=25 1 TA=25 PULSE WIDTH-300us 100 1% DUTY CYCLE 0.1 0.6 1 1.4 1.8 2.2 2.6 f=1.0MHz FORWARD VOLTAGE (V) Vsig=50m Vp-p 10 1 10 100 REVERSE VOLTAGE (V) Version:C10 PEAK FORWARD SURGE AVERAGE FORWARD JUNCTION CAPACITANCE (pF) CURRENT(A) CURRENT(A) INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (uA)