X-On Electronics has gained recognition as a prominent supplier of BAS40 RF Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. BAS40 RF Schottky Diodes & Rectifiers are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

BAS40 RF Taiwan Semiconductor

BAS40 RF electronic component of Taiwan Semiconductor
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Part No.BAS40 RF
Manufacturer: Taiwan Semiconductor
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers SOT-23 40V 0.2A Scho ttky Diode
Datasheet: BAS40 RF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0328 ea
Line Total: USD 98.4 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3315
10 : USD 0.2391
100 : USD 0.1166
1000 : USD 0.0682
3000 : USD 0.0531
9000 : USD 0.0474
24000 : USD 0.0438
45000 : USD 0.0416
99000 : USD 0.0416

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0328

   
Manufacturer
Product Category
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
trr - Reverse Recovery time
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Rad Hardened
Brand
Hts Code
Product Type
Factory Pack Quantity :
Subcategory
Vr - Reverse Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BAS40 RF from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BAS40 RF and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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BAS40 / -04 / -05 / -06 Taiwan Semiconductor 200mA, Low VF SMD Schottky Barrier Diode FEATURES KEY PARAMETERS Designed for mounting on small surface PARAMETER VALUE UNIT Low Capacitance I 200 mA F(AV) Low forward voltage drop V 40 V RRM Moisture sensitivity level: level 1, per J-STD-020 I 0.6 A RoHS Compliant FSM Halogen-free according to IEC 61249-2-21 V at I =40mA 1 V F F T Max. 125 C J Package SOT-23 APPLICATIONS Adapters For switching power supply Low stored charge Inverter MECHANICAL DATA Case: SOT-23 Molding compound: UL flammability classification rating 94V-0 Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Weight: 8 mg (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT BAS40 43 BAS40-04 44 Marking code on the device BAS40-05 45 BAS40-06 46 Repetitive peak reverse voltage V 40 V RRM Forward current I 200 mA F(AV) Non-repetitive peak forward surge current t = 8.3ms I 0.6 A FSM Junction temperature range T -65 to +125 C J Storage temperature range T -65 to +125 STG C 1 Version: H2001 BAS40 / -04 / -05 / -06 Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-ambient thermal resistance R 357 C/W JA ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN MAX UNIT I = 1mA, T = 25C 0.38 F J (1) - Forward voltage per diode V V F I = 40mA, T = 25C 1.00 F J (2) - 0.2 Reverse current per diode V =30V T = 25C I A R J R I =10A 40 - Reverse Breakdown Voltage V V R (BR) - 5.0 f=1 MHz, V =1V Junction capacitance R C pF J I =I =10mA, R =100, F R L - 5.0 Reverse Recovery Time t ns rr I =1mA RR Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms ORDERING INFORMATION ORDERING CODE PACKAGE PACKING (Note 1) BAS4xxxx RF SOT-23 3K / 7 Reel BAS4xxxx RFG SOT-23 3K / 7 Reel Note: 1. xxx defines part no. from0 to0-06 2 Version: H2001

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)
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