BAS40 RF Taiwan Semiconductor

BAS40 / -04 / -05 / -06 Taiwan Semiconductor 200mA, Low VF SMD Schottky Barrier Diode FEATURES KEY PARAMETERS Designed for mounting on small surface PARAMETER VALUE UNIT Low Capacitance I 200 mA F(AV) Low forward voltage drop V 40 V RRM Moisture sensitivity level: level 1, per J-STD-020 I 0.6 A RoHS Compliant FSM Halogen-free according to IEC 61249-2-21 V at I =40mA 1 V F F T Max. 125 C J Package SOT-23 APPLICATIONS Adapters For switching power supply Low stored charge Inverter MECHANICAL DATA Case: SOT-23 Molding compound: UL flammability classification rating 94V-0 Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Weight: 8 mg (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT BAS40 43 BAS40-04 44 Marking code on the device BAS40-05 45 BAS40-06 46 Repetitive peak reverse voltage V 40 V RRM Forward current I 200 mA F(AV) Non-repetitive peak forward surge current t = 8.3ms I 0.6 A FSM Junction temperature range T -65 to +125 C J Storage temperature range T -65 to +125 STG C 1 Version: H2001 BAS40 / -04 / -05 / -06 Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-ambient thermal resistance R 357 C/W JA ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN MAX UNIT I = 1mA, T = 25C 0.38 F J (1) - Forward voltage per diode V V F I = 40mA, T = 25C 1.00 F J (2) - 0.2 Reverse current per diode V =30V T = 25C I A R J R I =10A 40 - Reverse Breakdown Voltage V V R (BR) - 5.0 f=1 MHz, V =1V Junction capacitance R C pF J I =I =10mA, R =100, F R L - 5.0 Reverse Recovery Time t ns rr I =1mA RR Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms ORDERING INFORMATION ORDERING CODE PACKAGE PACKING (Note 1) BAS4xxxx RF SOT-23 3K / 7 Reel BAS4xxxx RFG SOT-23 3K / 7 Reel Note: 1. xxx defines part no. from0 to0-06 2 Version: H2001