X-On Electronics has gained recognition as a prominent supplier of BAS70 RF Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. BAS70 RF Diodes - General Purpose, Power, Switching are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

BAS70 RF Taiwan Semiconductor

BAS70 RF electronic component of Taiwan Semiconductor
BAS70 RF Taiwan Semiconductor
BAS70 RF Diodes - General Purpose, Power, Switching
BAS70 RF  Semiconductors

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See Product Specifications
Part No. BAS70 RF
Manufacturer: Taiwan Semiconductor
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching SOT-23, 70V, 0.07A, Schottky Diode
Datasheet: BAS70 RF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2212 ea
Line Total: USD 0.22 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 19 Mar to Fri. 21 Mar
MOQ : 1
Multiples : 1
1 : USD 0.2212
10 : USD 0.1575
100 : USD 0.0763
1000 : USD 0.0396
3000 : USD 0.0352
9000 : USD 0.0275
24000 : USD 0.0275
45000 : USD 0.0242
99000 : USD 0.0231

0
Ship by Fri. 21 Mar to Thu. 27 Mar
MOQ : 3000
Multiples : 3000
3000 : USD 0.0471

   
Manufacturer
Product Category
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We are delighted to provide the BAS70 RF from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BAS70 RF and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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BAS70 / -04 / -05 / -06 Taiwan Semiconductor 70mA, 70V SMD Schottky Barrier Diode FEATURES KEY PARAMETERS Low turn-on voltage PARAMETER VALUE UNIT Fast switching I 70 mA F Moisture sensitivity level: level 1, per J-STD-020 V 70 V RRM RoHS Compliant I 0.1 A Halogen-free according to IEC 61249-2-21 FSM V at I =15mA 1 V F F T Max. 125 C J APPLICATIONS Package SOT-23 Adapters For switching power supply Low stored charge Inverter MECHANICAL DATA Case: SOT-23 Molding compound: UL flammability classification rating 94V-0 Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Weight: 8 mg (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT BAS70 73 BAS70-04 74 Marking code on the device BAS70-05 75 BAS70-06 76 Repetitive peak reverse voltage V 70 V RRM Working peak reverse voltage V RWM 70 V DC blocking voltage V 70 V R RMS reverse voltage V R(RMS) 49 V Forward current I 70 mA F Non-repetitive peak forward surge current t = 1s I 100 mA FSM Power dissipation P 200 D mW Junction temperature range T -55 to +125 C J Storage temperature range T -55 to +150 STG C 1 Version: F2001 BAS70 / -04 / -05 / -06 Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-ambient thermal resistance R 625 C/W JA ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN MAX UNIT I = 1mA, T = 25C 0.41 F J (1) - Forward voltage per diode V V F I = 15mA, T = 25C 1.00 F J (2) - 100 Reverse current per diode V = 50V T = 25C I nA R J R I =10A 70 - Reverse Breakdown Voltage V V R (BR) - 2 f = 1 MHz, V =0V Junction capacitance R C pF J I =I =10mA, R =100, F R L - 5 Reverse Recovery Time t ns rr I =1mA RR Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms ORDERING INFORMATION ORDERING CODE PACKAGE PACKING (Note 1) BAS7xxxx RF SOT-23 3K / 7 Reel BAS7xxxx RFG SOT-23 3K / 7 Reel BAS7xxxx-B0 RF SOT-23 3K / 7 Reel BAS7xxxx-B0 RFG SOT-23 3K / 7 Reel BAS7xxxx-D0 RF SOT-23 3K / 7 Reel BAS7xxxx-D0 RFG SOT-23 3K / 7 Reel Note: 1. xxx defines part no. from0 to0-06 2 Version: F2001

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)
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