BAT42 R0 Taiwan Semiconductor

BAT42 / BAT43 Taiwan Semiconductor Small Signal Product Hermetically Sealed Glass Fast Switching Schottky Barrier Diode FEATURES - Low forward voltage drop - Through-hole device type mounting - Hermetically sealed glasss - Compression bonded construction - Solder hot dip tin (Sn) lead finish - All external surfaces are corrosion resistant and leads are readily solderable DO-35 Hermetically Sealed Glass MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted) A PARAMETER VALUE SYMBOL UNIT Power Dissipation P 200 mW D V Repetitive Peak Reverse Voltage 30 V RRM Maximum DC Blocking Voltage V 30 V R Average Forward Rectified Current I 200 mA F(AV) Peak Forward Surge Current I 4 A FSM o Operating and Storage Temperature Range T T -65 to +125 J , STG C PARAMETER MIN MAX SYMBOL UNIT I =100A Breakdown Voltage B 30 - V R V I =200mA -1.00 F I =10mA BAT42 -0.40 F I =50mA -0.65 F Forward Voltage Drop All Types V V F I =200mA -1.00 F I =2mA BAT43 0.26 0.33 F I =15mA -0.45 F V =25V Maximum Peak Reverse Current I 500 nA R R V =1V, f=1.0MHz C Junction Capacitance 7 (Typ) pF R J (Note 1) t 5 (Typ) Reverse Recovery Time ns rr Note 1: Reverse recovery test conditions: I =I =10mA, I =1mA, R =100 F R RR L Document Number: DS S1412008 Version: C14BAT42 / BAT43 Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (T =25 unless otherwise noted) A Fig. 2 Typical Reverse Characteristics Fig.1 Admissible Power Dissipation VS. Ambient Temperature 250 1000 125 C 200 100 -40 C 150 10 100 1 25 C 50 0.1 0 0.01 0 25 50 75 100 125 150 175 200 0 200 400 600 800 1000 1200 o T - Ambient Temperature ( C) V - Instantaneous Forward Voltage (mV) A F Fig. 3 Typical Reverse Characteristics Fig. 4 TypicalCapacitance VS. Reverse Applied Voltage 1000 18 16 125 C 100 14 100 C 12 10 75 C 10 50 C 8 1 6 25 C 4 0.1 2 0 0.01 0 102030 405060 0 1020 304050 V - Reverse Voltage (V) V - Reverse Voltage (V) R R Document Number: DS S1412008 Version: C14 P - Power Dissipation (mW) I - Reverse Leakage Current (uA) tot R I - Forward Current (mA) F Capacitance (pF)