X-On Electronics has gained recognition as a prominent supplier of BAS70-04 RF Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. BAS70-04 RF Diodes - General Purpose, Power, Switching are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

BAS70-04 RF Taiwan Semiconductor

BAS70-04 RF electronic component of Taiwan Semiconductor
BAS70-04 RF Taiwan Semiconductor
BAS70-04 RF Diodes - General Purpose, Power, Switching
BAS70-04 RF  Semiconductors

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See Product Specifications
Part No. BAS70-04 RF
Manufacturer: Taiwan Semiconductor
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching SOT-23 70V 0.07A Sch ottky Diode
Datasheet: BAS70-04 RF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2538 ea
Line Total: USD 0.25 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 08 Apr to Thu. 10 Apr
MOQ : 1
Multiples : 1
1 : USD 0.2538
10 : USD 0.1787
100 : USD 0.0828
1000 : USD 0.044
3000 : USD 0.0396
9000 : USD 0.0363
24000 : USD 0.0341
45000 : USD 0.033
99000 : USD 0.0308

0
Ship by Thu. 10 Apr to Wed. 16 Apr
MOQ : 3000
Multiples : 3000
3000 : USD 0.0451

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Pd - Power Dissipation
Brand
Cnhts
Hts Code
Maximum Diode Capacitance
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BAS70-04 RF from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BAS70-04 RF and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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BAS70 / -04 / -05 / -06 Taiwan Semiconductor 70mA, 70V SMD Schottky Barrier Diode FEATURES KEY PARAMETERS Low turn-on voltage PARAMETER VALUE UNIT Fast switching I 70 mA F Moisture sensitivity level: level 1, per J-STD-020 V 70 V RRM RoHS Compliant I 0.1 A Halogen-free according to IEC 61249-2-21 FSM V at I =15mA 1 V F F T Max. 125 C J APPLICATIONS Package SOT-23 Adapters For switching power supply Low stored charge Inverter MECHANICAL DATA Case: SOT-23 Molding compound: UL flammability classification rating 94V-0 Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Weight: 8 mg (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT BAS70 73 BAS70-04 74 Marking code on the device BAS70-05 75 BAS70-06 76 Repetitive peak reverse voltage V 70 V RRM Working peak reverse voltage V RWM 70 V DC blocking voltage V 70 V R RMS reverse voltage V R(RMS) 49 V Forward current I 70 mA F Non-repetitive peak forward surge current t = 1s I 100 mA FSM Power dissipation P 200 D mW Junction temperature range T -55 to +125 C J Storage temperature range T -55 to +150 STG C 1 Version: F2001 BAS70 / -04 / -05 / -06 Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-ambient thermal resistance R 625 C/W JA ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN MAX UNIT I = 1mA, T = 25C 0.41 F J (1) - Forward voltage per diode V V F I = 15mA, T = 25C 1.00 F J (2) - 100 Reverse current per diode V = 50V T = 25C I nA R J R I =10A 70 - Reverse Breakdown Voltage V V R (BR) - 2 f = 1 MHz, V =0V Junction capacitance R C pF J I =I =10mA, R =100, F R L - 5 Reverse Recovery Time t ns rr I =1mA RR Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms ORDERING INFORMATION ORDERING CODE PACKAGE PACKING (Note 1) BAS7xxxx RF SOT-23 3K / 7 Reel BAS7xxxx RFG SOT-23 3K / 7 Reel BAS7xxxx-B0 RF SOT-23 3K / 7 Reel BAS7xxxx-B0 RFG SOT-23 3K / 7 Reel BAS7xxxx-D0 RF SOT-23 3K / 7 Reel BAS7xxxx-D0 RFG SOT-23 3K / 7 Reel Note: 1. xxx defines part no. from0 to0-06 2 Version: F2001

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)
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