BSS123W Taiwan Semiconductor N-Channel Power MOSFET 100V, 160mA, 5 FEATURES KEY PERFORMANCE PARAMETERS Low R to minimize conductive losses PARAMETER VALUE UNIT DS(ON) Logic level V 100 V DS Low gate charge for fast power switching V = 10V 5 GS RoHS Compliant R (max) DS(on) Halogen-free according to IEC 61249-2-21 V = 4.5V 5.5 GS Q 1.1 nC g APPLICATIONS Low Side Load Switching Level Shift Circuits General Switch Circuits SOT-323 Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 100 V DS Gate-Source Voltage V 20 V GS T = 25C 160 A (Note 1) Continuous Drain Current I mA D T = 125C 74 A Pulsed Drain Current I 0.64 A DM T = 25C 298 A Total Power Dissipation P mW D T = 125C 60 A Operating Junction and Storage Temperature Range T , T - 55 to +150 C J STG THERMAL PERFORMANCE PARAMETER SYMBOL MAXIMUM UNIT Junction to Ambient Thermal Resistance R 420 C/W JA Thermal Performance Note: R is the sum of the junction-to-case and case-to-ambient thermal resistances. The case- JA thermal reference is defined at the solder mounting surface of the drain pins. R is guaranteed by design while R is JC CA 2 determined by the users board design. The R limit presented here is based on mounting on a 1 in pad of 2 oz copper. JA 1 Version: A2007 BSS123W Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 100 -- -- V GS D DSS Gate Threshold Voltage V = V , I = 250A V 1 1.8 2.5 GS DS D GS(TH) V Gate-Source Leakage Current V = 20V, V = 0V I -- -- 100 nA GS DS GSS V = 0V, V = 100V GS DS -- -- 1 Drain-Source Leakage Current I A V = 0V, V = 100V DSS GS DS -- -- 100 T =125C J V = 10V, I = 160mA -- 3.6 5 Drain-Source On-State Resistance GS D R DS(on) (Note 3) V = 4.5V, I = 160mA -- 3.8 5.5 GS D (Note 3) V = 5V, I = 160mA Forward Transconductance g -- 0.5 -- S DS D fs (Note 3) Dynamic V = 10V, V = 50V, GS DS Total Gate Charge Q -- 2 -- g I = 160mA D Total Gate Charge Q -- 1.1 -- g nC V = 4.5V, V = 50V, GS DS Gate-Source Charge Q -- 0.3 -- gs I = 160mA D Gate-Drain Charge Q -- 0.4 -- gd Input Capacitance C -- 30 -- iss V = 0V, V = 50V GS DS Output Capacitance C -- 9 -- oss pF f = 1.0MHz Reverse Transfer Capacitance C -- 6 -- rss (Note 3) Switching Turn-On Delay Time t -- 5 -- d(on) Turn-On Rise Time t -- 11 -- r V = 10V, V = 50V, GS DS ns Turn-Off Delay Time I = 160mA, R = 6 t -- 20 -- D G d(off) Turn-Off Fall Time t -- 51 -- f Source-Drain Diode (Note 2) Forward Voltage V -- -- 1.2 V V = 0V, I = 160mA SD GS S Reverse Recovery Time t -- 12 -- ns rr I = 160mA , S Reverse Recovery Charge Q -- 3 -- nC dI/dt = 100A/s rr Notes: 1. Silicon limited current only. 2. Pulse test: Pulse Width 300s, duty cycle 2%. 3. Switching time is essentially independent of operating temperature. ORDERING INFORMATION ORDERING CODE PACKAGE PACKING BSS123W RFG SOT-323 3,000pcs / 7 Reel 2 Version: A2007