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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.ES1F - ES1J Fast Rectifiers
July 2007
ES1F - ES1J
Fast Rectifiers
Features
For surface mount applications.
Glass passivated junction.
Low profile package.
Easy pick and place.
Built-in strain relief.
Superfast recovery times for high efficiency.
SMA(DO-214AC)
Color Band Denotes Cathode
Absolute Maximum Ratings * T = 25C unless otherwise noted
a
Value
Symbol Parameter Units
ES1F ES1G ES1H ES1J
V Maximum Repetitive Reverse Voltage 300 400 500 600 V
RRM
I Average Rectified Forward Current 1.0 A
F(AV)
Non-repetitive Peak Forward Surge Current
I 30 A
FSM
8.3 ms Single Half-Sine-Wave (JEDEC method)
T Junction Temperature 150 C
J
T Storage Temperature Range -55 to 150 C
STG
P Power Dissipation 1.47 W
D
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics
Symbol Parameter Value Units
R Thermal Resistance, Junction to Ambient * 85 C/W
JA
R Thermal Resistance, Junction to Lead * 35 C/W
JL
* P. C. B mounted on 0.2 x 0.2( 5 x 5 mm) copper Pad Area.
Electrical Characteristics T = 25C unless otherwise noted
C
Symbol Parameter Value Units
V Maximum Forward Voltage @ I = 1.0 A 1.3 1.7 V
F F
Maximum Reverse Recovery Time
T 35 ns
rr
IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A
Maximum Reverse Current @ rated VR TA = 25 C 5.0
I uA
R
TA = 100 C 100
Typical Junction Capacitance
C 10.0 8.0 pF
j
VR = 4.0 V, f = 1.0 MHz
2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
ES1F - ES1J Rev. A