MUR105S - MUR160S
Taiwan Semiconductor
1A, 50V - 600V Surface Mount Ultrafast Power Rectifier
FEATURES
KEY PARAMETERS
Glass passivated chip junction
PARAMETER VALUE UNIT
Ideal for automated placement
I 1 A
F(AV)
Ultrafast recovery time for high efficiency
V 50 - 600 V
RRM
Low forward voltage, low power loss
T 175 C
Compliant to RoHS Directive 2011/65/EU and J MAX
in accordance to WEEE 2002/96/EC
Package DO-214AA (SMB)
Halogen-free according to IEC 61249-2-21
Configuration Single Die
APPLICATIONS
Switching mode power supply (SMPS)
Adapters
Lighting application
Converter
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound meets UL 94V-0 flammability rating
Moisture sensitivity level: level 1, per J-STD-020
Packing code with suffix means green compound
(halogen-free)
Part no. with suffix H means AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
Polarity: As marked
Weight: 0.09 g (approximately)
DO-214AA (SMB)
ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted)
A
MUR MUR MUR MUR MUR MUR
PARAMETER SYMBOL UNIT
105S 110S 115S 120S 140S 160S
MUR MUR MUR MUR MUR MUR
Marking code on the device
105S 110S 115S 120S 140S 160S
Repetitive peak reverse voltage V 50 100 150 200 400 600 V
RRM
Reverse voltage, total rms value V 35 70 105 140 280 420 V
R(RMS)
Maximum DC blocking voltage V 50 100 150 200 400 600 V
DC
Forward current I 1 A
F(AV)
Surge peak forward current, 8.3 ms
single half sine-wave superimposed on I 40 35 A
FSM
rated load per diode
Junction temperature T - 55 to +175 C
J
Storage temperature T - 55 to +175 C
STG
1 Version:K1701
MUR105S - MUR160S
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER SYMBOL LIMIT UNIT
Junction-to-lead thermal resistance R 17 C/W
JL
ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted)
A
PARAMETER CONDITIONS SYMBOL TYP MAX UNIT
MUR105S V
MUR110S V
- 0.875
MUR115S V
(1)
Forward voltage per diode I = 1A,T = 25C V
F J F
MUR120S V
MUR140S V
- 1.250
MUR160S V
MUR105S V
MUR110S V
- 0.710
MUR115S V
(1)
Forward voltage per diode I = 1A,T = 150C V
F J F
MUR120S V
MUR140S V
- 1.050
MUR160S V
MUR105S A
MUR110S A
- 2
MUR115S A
Reverse current @ rated V
R
T = 25C I
J R
(2)
per diode MUR120S A
MUR140S A
- 5
MUR160S A
A
MUR105S
MUR110S A
- 50
MUR115S A
Reverse current @ rated V
R
T = 150C
I
J
R
(2)
per diode MUR120S A
MUR140S A
- 150
MUR160S A
ns
MUR105S
MUR110S ns
- 25
MUR115S ns
I =0.5A ,I =1.0A
F R
Reverse recovery time t
rr
MUR120S I =0.25A ns
RR
MUR140S ns
- 50
MUR160S ns
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
2 Version:K1701