RB500V-40 Taiwan Semiconductor Small Signal Product Low VF SMD Schottky Barrier Diode FEATURES - Low power loss, high current capability, low VF - Surface mount device type - Moisture sensitivity level (MSL): 1 - Packing code with suffix means green compound (halogen-free) SOD-323F MECHANICAL DATA - Case: Flat lead SOD-323F small outline plastic package - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed : 260C/10s - Polarity: Indicated by cathode band - Weight: 4.85 0.5 mg - Marking Code: S9 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted) A PARAMETER VALUE SYMBOL UNIT Power Dissipation P 200 mW D Peak Reverse Voltage V 45 V RM Reverse Voltage V 40 V R I Mean Forward Current 0.1 A O Non-Repetitive Peak Forward Surge Current 60Hz for 1 Cyc. I 1.0 A FSM o Thermal Resistance (Junction to Ambient) (Note) R 500 C/W JA o Junction and Storage Temperature Range T ,T -40 to +125 J STG C PARAMETER SYMBOL MIN MAX UNIT I = 100 A V 45 Reverse Breakdown Voltage - V R (BR) I = 10 mA V - 0.45 Forward Voltage F V F V = 10 V Reverse Leakage Current I - 1 A R R V = 10V , f = 1.0 MHz C - 6.0 Junction Capacitance pF R J Note: Valid provided that electrodes are kept at ambient temeprature. Document Number: DS S1412013 Version: C14RB500V-40 Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (T =25 unless otherwise noted) A Fig. 1 Forward Current Derating Curve Fig. 2 Typical Forward Characteristics 120 100 100 80 10 T =125C A 60 T =75C A T =25C A 40 1 T =-25C A 20 0 0. 1 0 25 50 75 100 125 150 0 200 400 600 800 1000 o T , Ambient Temperature ( C) A V , Instantaneous Forward Voltage (V) F Fig. 3 Typical Reverse Characteristics Fig. 4 Total Capacitance VS. Reverse 100 1000 f=1MHz T =125C A 100 10 T =75C A 10 1 T =25C A 0. 1 0. 01 1 0 1020 3040 0 5 10 15 20 25 30 35 40 V , Instantaneous Reverse Voltage (V) V , Reverse Voltage (V) R R Document Number: DS S1412013 Version: C14 I , Instantaneous Reverse Current (A) I , Average Rectified Current (mA) R O I , Instantaneous Forward Current (mA) F C , Total Capacitance (pF) T