RS1JM RS1KM Taiwan Semiconductor 1A, 600V - 800V Fast Recovery Surface Mount Rectifier FEATURES KEY PARAMETERS Ideal for automated placement PARAMETER VALUE UNIT Compact package size I 1 A F High surge current capability V 600 - 800 V RRM Low power loss, high efficiency Moisture sensitivity level: level 1, per J-STD-020 I 20 A FSM RoHS Compliant T 150 C J MAX Halogen-free according to IEC 61249-2-21 Package Micro SMA Configuration Single die APPLICATIONS DC to DC converter Switching mode converters and inverters General purpose MECHANICAL DATA Case: Micro SMA Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Polarity: Indicated by cathode band Weight: 0.006g (approximately) Micro SMA ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A RS1JM RS1KM PARAMETER SYMBOL UNIT Marking code on the device R7 R9 Repetitive peak reverse voltage V 600 800 V RRM Reverse voltage, total rms value V 420 560 V R(RMS) Forward current I 1 A F Surge peak forward current, 8.3ms single half I 20 A FSM sine wave superimposed on rated load Junction temperature T -55 to +150 C J Storage temperature T -55 to +150 C STG 1 Version: B2103 RS1JM RS1KM Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance R 25 C/W JL Junction-to-ambient thermal resistance R 95 C/W JA ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT (1) Forward voltage I = 1A, T = 25C V - 1.30 V F J F T = 25C - 5 A J (2) Reverse current rated V I R R T = 125C - 150 A J RS1JM - 250 ns IF = 0.5A, IR = 1.0A Reverse recovery time t rr Irr = 0.25A RS1KM - 500 ns Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION (1) ORDERING CODE PACKAGE PACKING RS1xM Micro SMA 12,000 / Tape & Reel Notes: 1. x defines voltage from 600V(RS1JM) to 800V(RS1KM) 2 Version: B2103