S1GFL Taiwan Semiconductor

S1GFL S1MFL Taiwan Semiconductor 1A, 400V - 1000V Standard Surface Mount Rectifier FEATURES KEY PARAMETERS Glass passivated chip junction PARAMETER VALUE UNIT Ideal for automated placement I 1 A F Low forward voltage drop V 400 - 1000 V RRM High surge current capability Moisture sensitivity level: level 1, per J-STD-020 I 30 A FSM RoHS Compliant T 150 C J MAX Halogen-free according to IEC 61249-2-21 Package SOD-123FL Configuration Single die APPLICATIONS DC to DC converter Switching mode converters and inverters General purpose MECHANICAL DATA Case: SOD-123FL Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 SOD-123FL Meet JESD 201 class 1A whisker test Polarity: Indicated by cathode band Weight: 0.016g (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL S1GFL S1JFL S1MFL UNIT Marking code on the device SGF SJF SMF Repetitive peak reverse voltage V V RRM 400 600 1000 Reverse voltage, total rms value V V 280 420 700 R(RMS) Forward current I 1 A F Peak forward surge current, 8.3ms single half I 30 A FSM sine-wave superimposed on rated load Junction temperature T - 55 to +150 C J Storage temperature T - 55 to +150 C STG 1 Version: E2103 S1GFL S1MFL Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance R 25 C/W JL Junction-to-ambient thermal resistance R 85 C/W JA ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT (1) - 1.1 Forward voltage I = 1A, T = 25C V V F J F T = 25C - 1 A J (2) Reverse current rated V I R R T = 125C - 50 A J Junction capacitance 1MHz, V = 4.0V C 7 - pF R J Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION (1) ORDERING CODE PACKAGE PACKING SOD-123FL 10,000 / Tape & Reel S1xFL Notes: 1. x defines voltage from 400V(S1GFL) to 1000V(S1MFL) 2 Version: E2103