S1GM Taiwan Semiconductor

S1GM S1JM Taiwan Semiconductor 1A, 400V - 600V Standard Surface Mount Rectifier FEATURES KEY PARAMETERS Ideal for automated placement PARAMETER VALUE UNIT Low forward voltage drop I 1 A F Glass passivated chip junction V 400 - 600 V RRM Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant I 20 A FSM Halogen-free according to IEC 61249-2-21 T 175 C J MAX Package Micro SMA APPLICATIONS Configuration Single die DC to DC converter Switching mode converters and inverters General purpose MECHANICAL DATA Case: Micro SMA Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.006g (approximately) Micro SMA ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A S1GM S1JM PARAMETER SYMBOL UNIT Marking code on the device A5 A7 Repetitive peak reverse voltage V 400 600 V RRM Reverse voltage, total rms value V 280 420 V R(RMS) Forward current I 1 A F Surge peak forward current, 8.3ms single half I 20 A FSM sine wave superimposed on rated load Junction temperature T -55 to +175 C J Storage temperature T -55 to +175 C STG 1 Version: I2103 S1GM S1JM Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance R 30 C/W JL Junction-to-ambient thermal resistance R 110 C/W JA ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT (1) Forward voltage I = 1A, T = 25C V - 1.10 V F J F T = 25C - 1 A J (2) Reverse current rated V I R R T = 125C - 50 A J Junction capacitance 1MHz, V = 4.0V C 5 - pF R J IF = 0.5A, IR = 1.0A Reverse recovery time t 780 - ns rr Irr = 0.25A Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION (1) ORDERING CODE PACKAGE PACKING S1xM Micro SMA 12,000 / Tape & Reel Notes: 1. x defines voltage from 400V(S1GM) to 600V(S1JM) 2 Version: I2103