SODDB3T RHG Taiwan Semiconductor

SODDB3/SODDB3T Taiwan Semiconductor Small Signal Product 400mW Trigger Diode (DIAC) FEATURES - Surface Mount Device SOD-123 packaged - V =32V DB3 BO - Max. P =400mW D MECHANICAL DATA - Case: Plastic gull wing SOD-123 package - High temperature soldering guaranteed: 260C/10s - Weight: 10.55mg (approximately) SOD-123 - Moisture sensitivity level (MSL): 1 - Pb free and RoHS compliant APPLICATION - These diacs are intended for use in thyrisitors phase control, circuits for lamp dimming, universal motor speed control, and heat control MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT Repetitive Peak on-state Current tp=20s, f=100Hz I 2 A TRM Power Dissipation P 400 mW D Junction Temperature T - 40 to +125 C J Storage Temperature Range T - 40 to +125 C STG PARAMETER SYMBOL MIN TYP MAX TEST CONDITION UNIT SODDB3 28 32 36 Reverse Breakdown Voltage V C=22nF V BO SODDB3T 30 32 34 SODDB3 +V - 3 BO1 Breakdown Voltage Symmetry C=22nF V -V SODDB3T BO2 2 SODDB3 5 Dynamic Breakdown Voltage V I= I to I =10mA V BO F SODDB3T 9 I t =20s, f=100Hz Repetitive Peak on-state Current 2 P A TRM Output Voltage V Note 5 V O V = 0.5V Leakage Current I - 10 A B BO R Rest Time t 1.5 s r SODDB3 100 I Breakdown current C=22nF A BO SODDB3T - 15 Note: Test circuit for output voltage Version: C1601SODDB3/SODDB3T Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (T =25C unless otherwise noted) A Fig. 2 Power derating curve Fig.1 Relative variation of V vs. junction temperature BO 1.08 200 1.06 150 1.04 100 1.02 50 5 6 1 0 25 50 75 100 125 0 25 50 75 100 125 150 7 Ambient temperature (C) Junction temperature (C) Fig. 3 Peak pulse current vs. pulse duration 1 10 2 f=100Hz 3 1 4 0.1 1 0.01 10 100 1000 10000 2 tp(s) 3 Version: C1601 o Repetitive peak on-state current I (A) V (T )/V (T =25 C) TRM BO J BO J Power dissipation (mW)