SS32 - SS320 Taiwan Semiconductor 3A, 20V - 200V Surface Mount Schottky Barrier Rectifier FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement I 3 A F(AV) Guard ring for over-voltage protection V 20 - 200 V RRM High surge current capability Compliant to RoHS Directive 2011/65/EU and Package DO-214AB (SMC) in accordance to WEEE 2002/96/EC Configuration Single die Halogen-free according to IEC 61249-2-21 APPLICATIONS Switching mode power supply (SMPS) Adapters Lighting application Converter MECHANICAL DATA Case: DO-214AB (SMC) Molding compound meets UL 94V-0 flammability rating Part no. with suffix means AEC-Q101 qualified Packing code with suffix means green compound (halogen-free) DO-214AB (SMC) Moisture sensitivity level: level 1, per J-STD-020 Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 0.21 g (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A SS SS SS SS SS SS SS SS SS SYMBOL UNIT PARAMETER 32 33 34 35 36 39 310 315 320 SS SS SS SS SS SS SS SS SS Marking code on the device 32 33 34 35 36 39 310 315 320 Repetitive peak reverse voltage V 20 30 40 50 60 90 100 150 200 V RRM Reverse voltage, total rms value V 14 21 28 35 42 63 70 105 140 V R(RMS) Maximum DC blocking voltage V 20 30 40 50 60 90 100 150 200 V DC Forward current I 3 A F(AV) Surge peak forward current, 8.3 ms single half sine-wave I 100 75 A FSM superimposed on rated load per diode Critical rate of rise of off-state dV/dt 10,000 V/s voltage Junction temperature T - 55 to +125 - 55 to +150 C J Storage temperature T - 55 to +150 C STG 1 Version:N1903 SS32 - SS320 Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance per diode R 17 C/W JL Junction-to-ambient thermal resistance per diode R 55 C/W JA ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP. MAX. UNIT SS32 SS33 - 0.50 V SS34 SS35 - 0.75 V (1) Forward voltage per diode SS36 I = 3A, T = 25C V F J F SS39 - 0.85 V SS310 SS315 - 0.95 V SS320 SS32 SS33 - 0.40 V SS34 SS35 - 0.65 V (1) Forward voltage per diode SS36 I = 3A, T = 100C V F J F SS39 - 0.70 V SS310 SS315 - 0.80 V SS320 SS32 SS33 SS34 - 0.5 mA SS35 Reverse current rated V per R SS36 T = 25C I (2) J R diode SS39 SS310 - 0.1 mA SS315 SS320 SS32 SS33 - 10 mA SS34 SS35 Reverse current rated V per - 5 mA R (2) SS36 T = 100C I J R diode SS39 SS310 - - mA SS315 SS320 SS32 SS33 - - mA SS34 SS35 Reverse current rated V per - - mA R (2) SS36 T = 125C I J R diode SS39 SS310 - 0.5 mA SS315 SS320 Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms 2 Version:N1903