SS3H10HE3_B/H Vishay

333 3 SS3H9, SS3H10 www.vishay.com Vishay General Semiconductor High Voltage Surface-Mount Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES Available Low profile package Ideal for automated placement Guardring for overvoltage protection Low power losses, high efficiency Low forward voltage drop Low leakage current SMC (DO-214AB) High surge capability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Cathode Anode AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 LINKS TO ADDITIONAL RESOURCES Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 3D Models TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection PRIMARY CHARACTERISTICS applications. I 3.0 A F(AV) V 90 V, 100 V RRM MECHANICAL DATA I 100 A FSM Case: SMC (DO-214AB) V 0.65 V F Molding compound meets UL 94 V-0 flammability rating I 20 A R Base P/N-E3 - RoHS-compliant, commercial grade T max. 175 C J Base P/NHE3 X - RoHS-compliant and AEC-Q101 qualified Package SMC (DO-214AB) ( X denotes revision code e.g. A, B, .....) Circuit configuration Single Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes the cathode end MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL SS3H9 SS3H10 UNIT Device marking code MS9 MS10 Maximum repetitive peak reverse voltage V 90 100 V RRM Working peak reverse voltage V 90 100 V RWM Maximum DC blocking voltage V 90 100 V DC Maximum average forward rectified current at: T = 115 C I 3.0 A L F(AV) Peak forward surge current 8.3 ms single half sine-wave I 100 A FSM superimposed on rated load Peak repetitive reverse surge current at t = 2.0 s, 1 kHz I 1.0 A p RRM Critical rate of rise of reverse voltage dV/dt 10 000 V/s Operating junction and storage temperature range T , T -65 to +175 C J STG Revision: 23-Apr-2020 Document Number: 88752 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D SS3H9, SS3H10 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL SS3H9 SS3H10 UNIT T = 25 C 0.8 J (1) Maximum instantaneous forward voltage I = 3.0 A V V F F T = 125 C 0.65 J T = 25 C 20 A J (2) Maximum reverse current at rated V I R R T = 125 C 4 mA J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL SS3H9 SS3H10 UNIT Typical thermal resistance, junction-to-lead at T = 25 C R 20 L JL C/W (1) Typical thermal resistance, junction-to-ambient R 50 JA Note (1) Units mounted on PCB with 0.55 x 0.55 (14 mm x 14 mm) copper pad areas ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SS3H9-E3/57T 0.235 57T 850 7 diameter plastic tape and reel SS3H9-E3/9AT 0.235 9AT 3500 13 diameter plastic tape and reel (1) SS3H9HE3 B/H 0.235 H 850 7 diameter plastic tape and reel (1) SS3H9HE3 B/I 0.235 I 3500 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 23-Apr-2020 Document Number: 88752 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000