SS5P10HM3_A/H Vishay

333 3 SS5P9, SS5P10 www.vishay.com Vishay General Semiconductor High Current Density Surface-Mount Schottky Barrier Rectifiers FEATURES eSMP Series Available Very low profile - typical height of 1.1 mm Ideal for automated placement K Guardring for overvoltage protection Low forward voltage drop, low power losses 1 High efficiency Low thermal resistance 2 Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C SMPC (TO-277A) AEC-Q101 qualified available K Anode 1 - Automotive ordering code: base P/NHM3 Cathode Anode 2 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 LINKS TO ADDITIONAL RESOURCES TYPICAL APPLICATIONS 3D Models For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, an d polarity protection application. PRIMARY CHARACTERISTICS MECHANICAL DATA I 5.0 A F(AV) Case: SMPC (TO-277A) V 90 V, 100 V RRM Molding compound meets UL 94 V-0 flammability rating I 150 A FSM Base P/N-M3 - halogen-free, RoHS-compliant, and V at I = 5.0 A 0.649 V F F commercial grade I 4.5 A R Base P/NHM3 X - halogen-free, RoHS-compliant, and T max. 150 C J AEC-Q101 qualified Package SMPC (TO-277A) ( X denotes revision code e.g. A, B, .....) Circuit configuration Single Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix meets JESD 201 class 2 whisker test MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL SS5P9 SS5P10 UNIT Device marking code S59 S510 Maximum repetitive peak reverse voltage V 90 100 V RRM Maximum average forward rectified current (fig. 1) I 5.0 A F(AV) Peak forward surge current 10 ms single half sine-wave I 150 A FSM superimposed on rated load Non-repetitive avalanche energy E 20 mJ AS at I = 2.0 A, T = 25 C AS J Operating junction and storage temperature range T , T -55 to +150 C J STG Revision: 24-Apr-2020 Document Number: 88984 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D SS5P9, SS5P10 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 2.5 A 0.708 - F T = 25 C A I = 5.0 A 0.832 0.88 F (1) Instantaneous forward voltage V V F I = 2.5 A 0.571 - F T = 125 C A I = 5.0 A 0.649 0.68 F T = 25 C 4.5 15 A A (2) Reverse current Rated V I R R T = 125 C 2.7 5 mA A Typical junction capacitance 4.0 V, 1 MHz C 130 - pF J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise specified) A PARAMETER SYMBOL SS5P9 SS5P10 UNIT (1) R 65 JA Typical thermal resistance C/W R 3 JL Note (1) Units mounted on recommended PCB 1 oz. pad layout ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE SS5P10-M3/86A 0.10 86A 1500 7 diameter plastic tape and reel SS5P10-M3/87A 0.10 87A 6500 13 diameter plastic tape and reel (1) SS5P10HM3 A/H 0.10 H 1500 7 diameter plastic tape and reel (1) SS5P10HM3 A/I 0.10 I 6500 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 24-Apr-2020 Document Number: 88984 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000