TSM035NB04CZ Taiwan Semiconductor N-Channel Power MOSFET 40V, 157A, 3.5m FEATURES KEY PERFORMANCE PARAMETERS Low R to minimize conductive losses PARAMETER VALUE UNIT DS(ON) Low gate charge for fast power switching V 40 V DS 100% UIS and R Tested g V = 10V 3.5 GS RoHS Compliant R (max) m DS(on) V = 7V 4.6 GS Halogen-free according to IEC 61249-2-21 Q 110 nC g APPLICATIONS BLDC Motor Control Battery Power Management DC-DC Converter TO-220 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 40 V DS Gate-Source Voltage V 20 V GS T = 25C 157 C (Note 1) Continuous Drain Current I A D T = 25C 18 A Pulsed Drain Current I 628 A DM (Note 2) Single Pulse Avalanche Current I 42 A AS (Note 2) Single Pulse Avalanche Energy E 265 mJ AS T = 25C 156 C Total Power Dissipation P W D T = 125C 31 C T = 25C 2 A Total Power Dissipation P W D T = 125C 0.4 A Operating Junction and Storage Temperature Range T , T - 55 to +150 C J STG THERMAL PERFORMANCE PARAMETER SYMBOL MAXIMUM UNIT Junction to Case Thermal Resistance R 0.8 C/W JC Junction to Ambient Thermal Resistance R 62 C/W JA Thermal Performance Note: RJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case- thermal reference is defined at the solder mounting surface of the drain pins. R is guaranteed by design while R is JC CA determined by the users board design. 1 Version: A2008 TSM035NB04CZ Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 40 -- -- V GS D DSS Gate Threshold Voltage V = V , I = 250A V 2 2.8 4 GS DS D GS(TH) V Gate-Source Leakage Current V = 20V, V = 0V I -- -- 100 nA GS DS GSS V = 0V, V = 40V GS DS -- -- 1 Drain-Source Leakage Current I A V = 0V, V = 40V DSS GS DS -- -- 100 T = 125C J V = 10V, I = 18A -- 2.5 3.5 Drain-Source On-State Resistance GS D R m DS(on) (Note 3) V = 7V, I = 16A -- 2.8 4.6 GS D (Note 3) V = 10V, I = 18A Forward Transconductance g -- 68 -- S DS D fs (Note 4) Dynamic V = 10V, V = 20V, GS DS Total Gate Charge Q -- 110 -- g I = 18A D Total Gate Charge Q -- 79 -- g nC V = 7V, V = 20V, GS DS Gate-Source Charge Q -- 33 -- gs I = 16A D Gate-Drain Charge Q -- 26 -- gd Input Capacitance C -- 6990 -- iss V = 0V, V = 20V, GS DS Output Capacitance C -- 667 -- pF oss f = 1.0MHz Reverse Transfer Capacitance C -- 334 -- rss Gate Resistance f = 1.0MHz R 0.6 2 4 g (Note 4) Switching Turn-On Delay Time t -- 18 -- d(on) Turn-On Rise Time t -- 77 -- r V = 10V, V = 20V, GS DS ns Turn-Off Delay Time I = 18A, R = 2 t -- 71 -- D G d(off) Turn-Off Fall Time t -- 60 -- f Source-Drain Diode (Note 3) Forward Voltage V -- -- 1 V V = 0V, I = 18A SD GS S Reverse Recovery Time t -- 34 -- ns rr I = 18A, S Reverse Recovery Charge Q -- 31 -- nC dI/dt = 100A/s rr Notes: 1. Silicon limited current only. 2. L = 0.3mH, V = 10V, V = 25V, R = 25, I = 42A, Starting T = 25C GS DD G AS J 3. Pulse test: Pulse Width 300s, duty cycle 2%. 4. Switching time is essentially independent of operating temperature. ORDERING INFORMATION ORDERING CODE PACKAGE PACKING TSM035NB04CZ C0G TO-220 50pcs / Tube 2 Version: A2008