TSM085N03PQ33 Taiwan Semiconductor N-Channel Power MOSFET 30V, 52A, 8.5m FEATURES PRODUCT SUMMARY Low R to minimize conductive Losses PARAMETER VALUE UNIT DS(ON) Low gate charge for fast power switching V 30 V DS 100% UIS and R tested g V = 10V 8.5 GS Compliant to RoHS Directive 2011/65/EU and in R (max) m DS(on) accordance to WEEE 2002/96/EC V = 4.5V 13 GS Halogen-free according to IEC 61249-2-21 definition Q 7.2 nC g APPLICATIONS DC-DC Converters Battery Power Management ORing FET/Load Switch PDFN33 Notes: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 30 V DS Gate-Source Voltage V 20 V GS T = 25C 52 C (Note 1) Continuous Drain Current I A D T = 25C 13 A (Note 1) Pulsed Drain Current I 208 A DM (Note 2) Single Pulse Avalanche Current I 23 A AS (Note 2) Single Pulse Avalanche Energy E 26 mJ AS T = 25C 37 C Total Power Dissipation P W D T = 125C 7 C T = 25C 2.3 A Total Power Dissipation P W D T = 125C 0.5 A Operating Junction and Storage Temperature Range T , T - 55 to +150 C J STG THERMAL RESISTANCE PARAMETER SYMBOL LIMIT UNIT Thermal Resistance Junction to Case R 3.4 C/W JC Thermal Resistance Junction to Ambient R 53 C/W JA Thermal Performance Note: R is the sum of the junction-to-case and case-to-ambient thermal resistances. The case- JA thermal reference is defined at the solder mounting surface of the drain pins. R is guaranteed by design while R is JA CA determined by the users board design. 1 Version: D1608 TSM085N03PQ33 Taiwan Semiconductor ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 30 -- -- GS D DSS V Gate Threshold Voltage V = V , I = 250A V 1 1.6 2.5 V GS DS D GS(TH) Gate-Source Leakage Current V = 20V, V = 0V I -- -- 100 GS DS GSS nA V = 0V, V = 30V -- -- 1 Drain-Source Leakage Current GS DS I A DSS V = 10V, I = 13A -- 6.2 8.5 Drain-Source On-State Resistance GS D R m (Note 3) DS(on) V = 4.5V, I = 13A -- 9 13 GS D (Note 3) V = 5V, I = 13A Forward Transconductance g -- 27 -- S DS D fs (Note 4) Dynamic V = 10V, V = 15V, GS DS Total Gate Charge Q -- 14.3 -- g I = 13A D Total Gate Charge Q 7.2 g nC V = 4.5V, V = 15V, GS DS Gate-Source Charge Q -- -- 2.6 gs I = 13A D Gate-Drain Charge Q -- -- gd 3.4 Input Capacitance C -- 817 -- iss V = 0V, V = 15V, GS DS Output Capacitance C -- 155 -- oss pF f = 1.0MHz Reverse Transfer Capacitance C -- 96 -- rss Gate Resistance f = 1.0MHz, open drain R 0.8 2.8 5.6 g (Note 4) Switching Turn-On Delay Time t -- 4.8 -- d(on) Rise Time t -- 12.5 -- V = 10V, V = 15V, r GS DS ns I = 15A, R = 3.3, Turn-Off Delay Time t -- 27.6 -- D G d(off) Fall Time t -- 8.2 -- f Source-Drain Diode (Note 3) Diode Forward Voltage V -- -- 1 V V = 0V, I = 13A SD GS S Reverse Recovery Time t -- 13 -- ns rr I = 13A, S Reverse Recovery Charge Q -- 6.3 -- nC di/dt = 100A/s rr Notes: 1. Current limited by package. 2. L = 0.1mH, V = 10V, V = 25V, R = 25, I = 23A, Starting T = 25C GS DS G AS J 3. Pulse test: Pulse Width 300s, duty cycle 2%. 4. Switching time is essentially independent of operating temperature. ORDERING INFORMATION PART NO. PACKAGE PACKING TSM085N03PQ33 RGG PDFN33 5,000pcs / 13 Reel 2 Version: D1608