TSM180N03PQ33 30V N-Channel Power MOSFET Key Parameter Performance Pin Definition: PDFN33 1. Source 8. Drain Parameter Value Unit 2. Source 7. Drain V 30 V 3. Source 6. Drain DS 4. Gate 5. Drain 18 V = 10V GS R (max) m DS(on) Note: V = 4.5V 28 GS MSL 1 (Moisture Sensitivity Level) per J-STD-020 Q 4.1 nC g Block Diagram Ordering Information Part No. Package Packing TSM180N03PQ33 RGG PDFN33 5Kpcs / 13 Reel Note: Halogen-free according to IEC 61249-2-21 definition N-Channel MOSFET Absolute Maximum Ratings (T = 25C unless otherwise noted) C Limit Parameter Symbol Unit 30 Drain-Source Voltage V V DS 20 Gate-Source Voltage V V GS 25 T =25C A C Continuous Drain Current I D 16 T =100C A C (Note 1) 100 Pulsed Drain Current I A DM (Note 2) Single Pulse Avalanche Energy E 32 mJ AS Power Dissipation T = 25C P 21 W C D Operating Junction Temperature T +150 C J -55 to +150 Storage Temperature Range T C STG Thermal Performance Parameter Symbol Limit Unit Thermal Resistance - Junction to Ambient R 62 C/W JA Thermal Resistance - Junction to Case R 6 C/W JC 1/5 Version: B1710 TSM180N03PQ33 30V N-Channel Power MOSFET Electrical Specifications (T = 25C unless otherwise noted) C Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 30 -- -- V GS D DSS V = 10V, I = 12A -- 14 18 GS D Drain-Source On-State Resistance R m DS(ON) V = 4.5V, I = 8A -- 20 28 GS D Gate Threshold Voltage V = V , I = 250A V 1.2 1.6 2.5 V DS GS D GS(TH) V = 30V, V = 0V -- -- 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 24V, T = 125C -- -- 10 DS J Gate Body Leakage V = 20V, V = 0V I -- -- 100 nA GS DS GSS (Note 3) Forward Transconductance V = 10V, I = 6A g -- 6.5 -- S DS D fs Dynamic (Note 3,4) Total Gate Charge Q -- 4.1 -- g V = 15V, I = 6A, (Note 3,4) DS D Gate-Source Charge Q -- 1 -- gs nC V = 4.5V GS (Note 3,4) Gate-Drain Charge Q -- 2.1 -- gd Input Capacitance C -- 345 -- iss V = 25V, V = 0V, DS GS Output Capacitance C -- 55 -- pF oss f = 1.0MHz Reverse Transfer Capacitance C -- 32 -- rss Switching (Note 3,4) Turn-On Delay Time t -- 2.8 -- d(on) (Note 3,4) Turn-On Rise Time t -- -- 7.2 V = 15V, I = 1A, r DD D ns (Note 3,4) V = 10V, R = 6 Turn-Off Delay Time t -- 15.8 -- GS G d(off) (Note 3,4) Turn-Off Fall Time t -- 4.6 -- f Source-Drain Diode Ratings and Characteristic Maximum Continuous Drain-Source I -- -- 25 A S Diode Forward Current Integral reverse diode in the MOSFET Maximum Pulse Drain-Source Diode I -- -- 100 A SM Forward Current Diode-Source Forward Voltage V = 0V, I = 1A V -- -- 1 V GS S SD Note: 1. Pulse width limited by safe operating area 2. L = 1mH, I = 8A, V = 25V, R = 25, Starting T = 25C AS DD G J 3. Pulse test: pulse width 300s, duty cycle 2% 4. Switching time is essentially independent of operating temperature. 2/5 Version: B1710