TSM2N60S Taiwan Semiconductor N-Channel Power MOSFET 600V, 0.6A, 5 FEATURES KEY PERFORMANCE PARAMETERS Robust high voltage termination PARAMETER VALUE UNIT Avalanche energy specified V 600 V DS Diode is characterized for use in bridge circuits R (max) 5 DS(on) Source to Drain diode recovery time comparable to a Q 13 nC g discrete fast recovery diode. APPLICATION Power Supply Lighting Charger SOT-223 Notes: MSL 3 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 600 V DS Gate-Source Voltage V 30 V GS T = 25C 0.6 C (Note 1) Continuous Drain Current I A D T = 100C 0.36 C (Note 2) Pulsed Drain Current I 1.5 A DM Total Power Dissipation T = 25C P 2.5 W C DTOT (Note 3) Single Pulsed Avalanche Energy E 62 mJ AS (Note 3) Single Pulsed Avalanche Current I 2.5 A AS Operating Junction Temperature T 150 C J Operating Junction and Storage Temperature Range T , T - 55 to +150 C J STG THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Case Thermal Resistance R 15 C/W JC Junction to Ambient Thermal Resistance R 55.8 C/W JA Notes: R is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined JA at the solder mounting surface of the drain pins. R is guaranteed by design while R is determined by the users board JA CA design. R shown below for single device operation on FR-4 PCB with minimum recommended footprint in still air JA Document Number: DS P0000066 1 Version: C15 Not Recommended TSM2N60S Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 4) Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 600 -- -- V GS D DSS Gate Threshold Voltage V = V , I = 250A V 2 -- 4 DS GS D GS(TH) V Gate Body Leakage V =30V, V =0V I -- -- 100 nA GS DS GSS Zero Gate Voltage Drain Current V =600V, V =0V I -- -- 1 A DS GS DSS V =10V, I =0.6A R -- 3.6 5 Drain-Source On-State Resistance GS D DS(ON) V = 10V, I = 0.2A g -- 0.8 -- S Forward Transconductance DS D fs (Note 5) Dynamic Total Gate Charge Q -- 13 -- g V =400V, I =0.6A, DS D Gate-Source Charge Q -- 2 -- gs nC V = 10V GS Gate-Drain Charge Q -- 6 -- gd Input Capacitance C -- 435 -- iss V =25V, V =0V, DS GS Output Capacitance C -- 56 -- pF oss f =1.0MHz Reverse Transfer Capacitance C -- 9.2 -- rss (Note 6) Switching Turn-On Delay Time t -- 12 -- d(on) Turn-On Rise Time t -- -- 21 V =10V, I =0.6A, r GS D ns Turn-Off Delay Time V =300V, R =18, t -- 30 -- DD G d(off) Turn-Off Fall Time t -- 24 -- f (Note 4) Source-Drain Diode Forward On Voltage -- 0.85 1.15 V I = 0.6A, V = 0V V S GS SD Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature 3. L = 20mH, I = 2.5A, V = 50V, R = 25, Starting T = 25C AS DD G J 4. Pulse test: PW 300s, duty cycle 2% 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. Document Number: DS P0000066 2 Version: C15 Not Recommended