TSM2N7002AKCU Taiwan Semiconductor N-Channel Power MOSFET 60V, 240mA, 2.5 FEATURES KEY PERFORMANCE PARAMETERS Low R to minimize conductive losses PARAMETER VALUE UNIT DS(ON) Logic level V 60 V DS Low gate charge for fast power switching V = 10V 2.5 GS ESD Protected 2.5KV (HBM) R (max) DS(on) RoHS Compliant V = 4.5V 3 GS Halogen-free according to IEC 61249-2-21 Q 0.91 nC g APPLICATIONS Low Side Load Switching Level Shift Circuits General Switch Circuits SOT-323 Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 60 V DS Gate-Source Voltage V 20 V GS T = 25C 240 A (Note 1) Continuous Drain Current I mA D T = 125C 109 A Pulsed Drain Current I 0.96 A DM T = 25C 298 A Total Power Dissipation P mW D T = 125C 60 A Operating Junction and Storage Temperature Range T , T - 55 to +150 C J STG THERMAL PERFORMANCE PARAMETER SYMBOL MAXIMUM UNIT Junction to Ambient Thermal Resistance R 420 C/W JA Thermal Performance Note: R is the sum of the junction-to-case and case-to-ambient thermal resistances. The case- JA thermal reference is defined at the solder mounting surface of the drain pins. R is guaranteed by design while R is JC CA 2 determined by the users board design. The R limit presented here is based on mounting on a 1 in pad of 2 oz copper. JA 1 Version: A2111 TSM2N7002AKCU Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 60 -- -- V GS D DSS Gate Threshold Voltage V = V , I = 250A V 1 1.4 2.5 GS DS D GS(TH) V Gate-Source Leakage Current V = 20V, V = 0V I -- -- 10 A GS DS GSS V = 0V, V = 60V GS DS -- -- 1 Drain-Source Leakage Current I A V = 0V, V = 60V DSS GS DS -- -- 100 T =125C J V = 10V, I = 240mA -- 1.9 2.5 Drain-Source On-State Resistance GS D R DS(on) (Note 3) V = 4.5V, I = 220mA -- 2 3 GS D (Note 3) V = 5V, I = 240mA Forward Transconductance g -- 0.5 -- S DS D fs (Note 3) Dynamic Total Gate Charge Q -- 0.68 -- g V = 4.5V, V = 30V, GS DS Gate-Source Charge Q -- 0.43 -- nC gs I = 240mA D Gate-Drain Charge Q -- 0.17 -- gd Input Capacitance C -- 30 -- iss V = 0V, V = 30V GS DS Output Capacitance C -- 15 -- oss pF f = 1.0MHz Reverse Transfer Capacitance C -- 6 -- rss (Note 3) Switching Turn-On Delay Time t -- 2.72 -- d(on) Turn-On Rise Time t -- 2 -- r V = 10V, V = 30V, GS DS ns Turn-Off Delay Time I = 240mA, R = 6 t -- 7.98 -- D G d(off) Turn-Off Fall Time t -- 9.5 -- f Source-Drain Diode (Note 2) Forward Voltage V -- -- 1.2 V V = 0V, I = 240mA SD GS S Reverse Recovery Time t -- 10 -- ns rr I = 240mA , S Reverse Recovery Charge Q -- 3.2 -- nC dI/dt = 100A/s rr Notes: 1. Silicon limited current only. 2. Pulse test: Pulse Width 300s, duty cycle 2%. 3. Switching time is essentially independent of operating temperature. ORDERING INFORMATION ORDERING CODE PACKAGE PACKING TSM2N7002AKCU RFG SOT-323 3,000pcs / 7 Reel 2 Version: A2111