TSM500N15CS Taiwan Semiconductor N-Channel 150V Power MOSFET FEATURES KEY PERFORMANCE PARAMETERS Low R to minimize conductive losses PARAMETER VALUE UNIT DS(ON) Low gate charge for fast power switching V 150 DS V RoHS Compliant R (max) V = 10V 50 DS(on) GS m Halogen-Free according to IEC 61249-2-21 APPLICATIONS DC-DC Converters Power Routing Motor Drives SOP-8 Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 150 V DS Gate-Source Voltage V 20 V GS T = 25C 11 C Continuous Drain Current I A D T = 25C 4 A Pulsed Drain Current I 44 A DM Single Pulse Avalanche Current I 8.9 A AS Single Pulse Avalanche Energy E 12 mJ AS Total Power Dissipation T = 25C P 12.7 W A D Operating Junction and Storage Temperature Range T , T - 55 to +150 C J STG THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Thermal Resistance Junction to Case R c 9.85 C/W J Thermal Resistance Junction to Ambient R 75 C/W JA 1 Version: A2112 TSM500N15CS Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 150 -- -- V GS D DSS Gate Threshold Voltage V = V , I = 250A V 2 3 4 V GS DS D GS(TH) Gate-Source Leakage Current V = 20V, V = 0V I -- -- 100 nA GS DS GSS V = 0V, V = 120V -- -- 1 GS DS Drain-Source Leakage Current I DSS A V = 0V, V = 120V GS DS -- -- 10 T = 125C J Drain-Source On-State Resistance V = 10V, I = 4A R -- 40.6 50 m (Note 3) GS D DS(on) (Note 3) Forward Transconductance V = 10V, I = 4A g -- 22 -- S DS D fs (Note 4) Dynamic Total Gate Charge Q -- 20.5 -- g V = 10V, V = 80V, GS DS Gate-Source Charge Q -- 4.6 -- gs nC I = 4A D Gate-Drain Charge Q -- 6 -- gd Total Gate Charge Q -- 15.6 -- g V = 7V, V = 80V, GS DS Gate-Source Charge Q -- 4.5 -- nC gs I = 4A D Gate-Drain Charge Q -- 6 -- gd Input Capacitance C -- 1123 -- iss V = 0V, V = 80V, GS DS Output Capacitance C -- 80 -- oss pF f = 1.0MHz Reverse Transfer Capacitance C -- 4.9 -- rss Gate Resistance f = 1.0MHz R -- 0.7 -- g (Note 4) Switching Turn-On Delay Time t -- 14 -- d(on) Turn-On Rise Time t -- 21.4 -- r V = 10V, V = 80V, GS DS ns Turn-Off Delay Time I = 4A, R = 2 t -- 29.5 -- D G d(off) Turn-Off Fall Time t -- 10.6 -- f Source-Drain Diode (Note 3) Forward Voltage V = 0V, I = 11A V -- 0.8 1 V GS S SD Reverse Recovery Time I = 2A, t -- 51 -- ns S rr dI/dt = 100A/s Reverse Recovery Charge Q -- 3.2 -- nC rr Notes: 1. Current limited by package. 2. L = 0.3mH, V = 10V, V = 80V, R = 25, Starting T = 25C GS DD G J 3. Pulse test: Pulse Width 300s, duty cycle 2%. 4. Switching time is essentially independent of operating temperature. ORDERING INFORMATION ORDERING CODE PACKAGE PACKING TSM500N15CS RLG SOP-8 2,500pcs / 13 Reel 2 Version: A2112