TSM500P02D Taiwan Semiconductor P-Channel Power MOSFET -20V, -4.7A, 50m KEY PERFORMANCE PARAMETERS FEATURES PARAMETER VALUE UNIT Halogen-free V -20 V DS Suited for 1.8V drive applications V =- 4.5V Low profile package GS 50 R (max) V = -2.5V 65 m GS DS(on) APPLICATION V = -1.8V 85 GS Battery Pack Q 9.6 nC g Load Switch TDFN2x2 Notes: Moisture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V -20 V DS Gate-Source Voltage V 10 V GS T = 25C -4.7 C (Note 1) Continuous Drain Current I A D T = 100C -2.82 C (Note 2) Pulsed Drain Current I -18.8 A DM Total Power Dissipation T = 25C P 0.62 W C DTOT Operating Junction and Storage Temperature Range T , T - 55 to +150 C J STG THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Ambient Thermal Resistance R 200 C/W JA Notes: R is the sum of the junction-to-case and case-to-ambient thermal resistances.R is guaranteed by design while JA JA R is determined by the users board design. R shown below for single device operation on FR-4 PCB in still air. CA JA Document Number: DS P0000114 1 Version: B15 TSM500P02D Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 3) Static Drain-Source Breakdown Voltage V = 0V, I = -250A BV -20 -- -- V GS D DSS Gate Threshold Voltage V = V , I = -250A V DS GS D GS(TH) -0.3 -0.6 -0.8 V Gate Body Leakage V = 10V, V = 0V I -- -- 100 GS DS GSS nA Zero Gate Voltage Drain Current V = -20V, V = 0V I -- -- -1 A DS GS DSS -- V = -4.5V, I = -3A 42 50 GS D Drain-Source On-State Resistance V = -2.5V, I = -2A R -- 57 65 m GS D DS(ON) V = -1.8V, I = -1A -- 75 85 GS D Forward Transconductance V = -10V, I = -3A g -- 7 -- S DS D fs (Note 4) Dynamic Total Gate Charge Q -- 9.6 13 g V = -10V, I = -3.0A, DS D Gate-Source Charge Q -- 1.6 2 nC gs V = -4.5V GS Gate-Drain Charge Q -- 2 4 gd Input Capacitance C -- 850 1230 iss V = -10V, V = 0V, DS GS Output Capacitance C -- oss 70 100 pF f = 1.0MHz Reverse Transfer Capacitance C -- rss 55 80 (Note 5) Switching Turn-On Delay Time t -- 6 11 d(on) V = -10V, DD Turn-On Rise Time t -- 21.6 41 r R = 25, ns GEN Turn-Off Delay Time t -- 51 97 d(off) I = -1A, V = -4.5V, D GS Turn-Off Fall Time t -- f 13.8 26 (Note 3) Source-Drain Diode Continuous Source Current I -- -- -4.7 A S V = V = 0V, G D Force Current Pulsed Source Current I -- -- -18.8 A SM Forward On Voltage -- -- -1.0 V I = -1.0A, V = 0V V S GS SD Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature 3. Pulse test: PW 300s, duty cycle 2% 4. For DESIGN AID ONLY, not subject to production testing. 5. Switching time is essentially independent of operating temperature. Document Number: DS P0000114 2 Version: B15